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Volumn 6154 I, Issue , 2006, Pages

Mask defect printing mechanisms for future lithography generations

Author keywords

Lithography simulation; Mask defect printability; Mask topography

Indexed keywords

COMPUTER SIMULATION; DEFECTS; ELECTROMAGNETIC FIELDS; MASKS;

EID: 33745781673     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.655558     Document Type: Conference Paper
Times cited : (4)

References (16)
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  • 4
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    • Required performances of reticle inspection system for ArF lithography: Through analysis of defect printability study
    • Kim B.G., Tanaka K., Yoshioka N., Takayama N., Hatta K., Murakami S., and Otaki M.: "Required Performances of Reticle Inspection System for ArF Lithography: Through Analysis of Defect Printability Study", Proc. SPIE 4754 (2002) 517
    • (2002) Proc. SPIE , vol.4754 , pp. 517
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  • 6
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    • Defect printability for sub-0.18μm design rules using 193nm lithography process and binary reticle
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    • Defect printability for 100nm design rule using 193nm lithography
    • Philipsen V., Jonckheere R., Kohlpot S., and Torres A.: "Defect Printability for 100nm Design Rule using 193nm Lithography", Proc. SPIE 4754 (2002) 640
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  • 12
    • 0035758725 scopus 로고    scopus 로고
    • Automatic defect severity scoring for 193nm reticle defect inspection
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  • 14
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.