Required performances of reticle inspection system for ArF lithography: Through analysis of defect printability study

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4754, Issue , 2002, Pages 517-525

  Kim, Byung Gook ^a   Tanaka, Keishi ^a   Yoshioka, Nobuyuki ^a   Takayama, Naohisa ^b   Hatta, Keiichi ^b   Murakami, Shingo ^b   Otaki, Masao ^c  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b NEC CORPORATION   (Japan)

^c Toppan Printing   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; COMPUTER SIMULATION; LIGHT TRANSMISSION; MASKS; SENSITIVITY ANALYSIS;

RETICLE INSPECTION SYSTEM;

PHOTOLITHOGRAPHY;

EID: 0036454750     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.476960     Document Type: Conference Paper

References (4)

1. B.G. Kim, S.W. Choi, W.S. Han, J.M. Sohn, "Beneath the MEEF", Solid State Technology, August, 2000.
2. J. Novak, B. Eynon, A. Rosenbusch, A. Gldenshtein, "Defect dispositioning using mask printability on attenuated phase shift production photomasks", Proc. SPIE, 4409, pp. 488-498, 2001.
3. A. Stivers, E. Tejinil, "Dependence of mask printability and printability criteria on lithography process resolution", Proc. SPIE, 4562, pp. 122-129, 2001.
4. S. Murakami, N. Takayama, K. Hatta, F. Matsuo, M. Otaki, K. Tanaka, B.G. Kim, N. Yoshioka, "Performance of high resolution DUV inspection system for ArF lithography reticle", Proc. SPIE, 4754, 2002.