The impact of mask defect in a high MEEF process

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5040 II, Issue , 2003, Pages 1067-1078

  Jeong, Chang Young ^a   Park, Ki Yeop ^a   Choi, Jae Sung ^a   Lee, Jeong Gun ^a   Lee, Dai Hoon ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

Defect printability; Illumination condition; Linearity; MEEF

Indexed keywords

ASPECT RATIO; CORRELATION THEORY; DEFECTS; DESIGN FOR TESTABILITY; MASKS; PATTERN RECOGNITION;

CRITICAL DIMENSION; MASK DEFECT; MASK ERROR ENHANCEMENT FACTOR;

PHOTOLITHOGRAPHY;

EID: 0141833182     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485514     Document Type: Conference Paper

References (6)

1. F.M.Schenllenberg, Chris Mack, "MEEF in Theory and Practice", 19th Annual BACUS Symposium on Photomask Technology and Management.
2. Sia Kim Tan, Qunying Lin, Gek Soon Chua, Chenggen Quan, Cho Jui Tay, "MEF studies for Attenuated Phase Shift Mask for sub 0.13um Technology using 248nm", SPIE, 4691, pp 1366-1372, 2002.
3. Travis E.Brist, George E. Bailey, "Reticle process effects on OPC models", SPIE, 4691, pp 1373-1382, 2002.
4. Pei-yang Yan, An Tran, Michael Schmidt, "Mask Defect Printability at 0.18um Design Rules for 193nm Lithography", SPIE, 3051, pp 308-318, 1997.
5. Wan-Ho Kim, Won-Kwang Ma, Hee-Bom Kim, "Defect Printability and Specification of ArF Mask in Repeating Feature", SPIE, 4691, pp 1357-1365, 2002.
6. Ken Ozawa, Tohru Komizo, Koji Kikuchi, Hidetoshi Ohnuma, Hiroich Kawahira, "Defect Printability of Alternative Phase-Shift Mask: A Critical Comparison of Simulation and Experiment", SPIE, 4691, pp 1009-1020, 2002.