A femtogram resolution mass sensor platform, based on SOI electrostatically driven resonant cantilever. Part I: Electromechanical model and parameter extraction

Ultramicroscopy

Volumn 106, Issue 8-9, 2006, Pages 800-807

  Teva, J ^a   Abadal, G ^a   Torres, F ^a   Verd, J ^a   Perez Murano F ^b   Barniol, N ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

Cantilever based sensors; Electromechanical model; NEMS; Resonance frequency

Indexed keywords

CANTILEVER BEAMS; ELASTIC MODULI; ELECTROSTATICS; MATHEMATICAL MODELS; NATURAL FREQUENCIES; SILICON ON INSULATOR TECHNOLOGY;

CANTILEVER BASED SENSORS; ELECTROMECHANICAL MODEL; NEMS; SENSOR PARAMETERS;

SENSORS;

SILICON;

ARTICLE; BIOSENSOR; CALCULATION; ELECTRICITY; ENVIRONMENTAL FACTOR; EXTRACTION; MATHEMATICAL MODEL; PARAMETER; TRANSDUCER; YOUNG MODULUS;

EID: 33745745771     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2005.12.016     Document Type: Article

References (22)

1. Ekinci K.L., and Roukes M.L. Rev. Sci. Instr. 76 (2005) 061101
2. Ekinci K.L., Huang X.M.H., and Roukes M.L. Appl. Phys. Lett. 84-22 (2004) 4469
3. Berger R., Gerber C., Lang H.P., and Gimzewski J.K. Microelectron. Eng 35 (1997) 373
4. Verd J., Abadal G., Teva J., Villarroya M., Uranga A., Borrisé X., Campabadal F., Esteve J., Figueras E., Pérez-Murano F., Davis Z.J., Forsén E., Boisen A., and Barniol N. J. Microelectromech. Systems 14 3 (2005) 508
5. Ghatnekar-Nilsson S., Forsén E., Abadal G., Verd J., Campabadal F., Pérez-Murano F., Esteve J., Barniol N., Boisen A., and Montelius L. Nanotechnology 16 (2005) 98
6. Mattila T., Kiihamäki J., Lamminmaäki T., Jaakkola O., Rantakari P., Oja A., Seppä H., Kattelus H., and Tittonen I. Sensors Actuators A 101 (2002) 1
7. Bietsch A., Zhang J., Hegner M., Lang H.P., and Gerber C. Nanotechnology 15 (2004) 873
8. Forsén E., Abadal G., Ghatnekar-Nilsson S., Teva J., Verd J., Sandberg R., Svendsen W., Pérez-Murano F., Esteve J., Figueras E., Campabadal F., Montelius L., Barniol N., and Boisen A. Appl. Phys. Lett. 87 (2005) 043507
9. J.R. Clark, W.-T. Hsu, C. T.-C. Nguyen, Technical Digest, IEEE International Electron Devices Meeting, San Francisco, CAL, December 11-13 (2000) p. 493.
10. J. Teva, G. Abadal, X. Jordà, X. Borrisé, Z. Davis, N. Barniol. Proceedings of SPIE vol. 5116: Smart Sensors, Actuators and MEMS. Gran Canaria, Spain, May 19-21 (2003) p. 353.
11. Teva J., Abadal G., Davis Z.J., Verd J., Borrisé X., Boisen A., Pérez-Murano F., and Barniol N. Ultramicroscopy 100 (2004) 225
12. Abadal G., Davis Z.J., Helbo B., Borrisé X., Ruiz R., Boisen A., Campabadal F., Esteve J., Figueras E., Pérez-Murano F., and Barniol N. Nanotechnology 12 (2001) 100
13. Sarid D. Scanning Force Microscopy (1991), Oxford University Press, Oxford. 0-19-509204-X
14. Mattila T., Jaakkola O., Kiihamäki J., Karttunen J., Lamminmaäki T., Rantakari P., Oja A., Seppä H., Kattelus H., and Tittonen I. Sensors Actuators A 97-98 (2002) 497
15. Q. Jing, T. Mukherjee and G.K. Fedder Large Deflection Beam Model for Schematic Based Behavioral Simulation in NODAS. Technical Proceedings of 2002 International Conference on Modeling and Simulation of Microsystems. NanoTech 2002-MSM 2002. San Juan, Puerto Rico.
16. http://bsac.berkeley.edu/cadtools/sugar/sugar
17. akurai T.S., and Tamaru K. IEEE Trans. Electron. Dev. ED-30 2 (1983) 183
18. http://www.orcad.com/pspicead.aspx
19. Bhushan B., and Liu X. J. Mater. Res. 12-1 (1997) 54
20. Davis Z.J., Abadal G., Kuhn O., Hansen O., Grey F., and Boisen A. J. Vac. Sci. Technol. B 18-2 (2000) 612
21. Teva J., Abadal G., Davis Z.J., Verd J., Borrisé X., Boisen A., Pérez-Murano F., and Barniol N. Ultramicroscopy 100 (2004) 225
22. J. Teva, G. Abadal, F.Torres, J. Verd, F. Pérez-Murano, N. Barniol, Ultramicroscopy, in press, doi:10.1016/j.ultramic.2005.12.017.