Metallorganic CVD of high-quality PZT thin films at low temperature with new Zr and Ti precursors having MMP ligands

Journal of the Electrochemical Society

Volumn 151, Issue 5, 2004, Pages

  Zhao, Jin Shi ^a   Park, Dong Yeon ^a,c   Seo, Moo Jin ^a   Hwang, Cheol Seong ^a   Han, Young Ki ^b   Yang, Cheol Hoon ^b   Oh, Ki Young ^b  

^a Seoul National University   (South Korea)

^b JuSung Engineering Limited   (South Korea)

^c INOSTEK Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COERCIVE FORCE; DEPOSITION; ELECTRIC POTENTIAL; ELECTRODES; FERROELECTRIC MATERIALS; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLARIZATION; POSITIVE IONS; THERMAL EFFECTS; THIN FILMS; TITANIUM; ZIRCONIUM;

CATION COMPOSITION; MMP LIGANDS; NONVOLATILE STAND; PRECURSORS;

LEAD COMPOUNDS;

EID: 2942556727     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1676711     Document Type: Article

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