TSUPREM-4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditions

Materials Science in Semiconductor Processing

Volumn 8, Issue 1-3 SPEC. ISS., 2005, Pages 115-120

  Sibaja Hernandez, Arturo ^a,b   Xu, Ming Wei ^a   Decoutere, Stefaan ^a   Maes, Herman ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Diffusion; RTA; SiGeC; Simulation

Indexed keywords

BORON; CARBON; COMPUTER SIMULATION; CONCENTRATION (PROCESS); DIFFUSION; DOPING (ADDITIVES); IMPURITIES; POLYSILICON; RAPID THERMAL ANNEALING;

DIFFUSIVITY; POLYEMITTER; SIGEC;

SILICON COMPOUNDS;

EID: 13244290171     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.039     Document Type: Conference Paper

References (20)

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