Polycrystalline AlN films deposited at low temperature for selective UV detectors

Sensors and Actuators, A: Physical

Volumn 113, Issue 3, 2004, Pages 355-359

  Gudovskikh, Alexander S ^a   Alvarz, José ^a   Kleider, Jean Paul ^a   Afanasjev, Valentin P ^b   Luchinin, Victor V ^b   Sazanov, Alexander P ^b   Terukov, Evgenii I ^c  

^a UNIV PARIS SUD   (France)

^b SAINT PETERSBURG ELECTROTECHNICAL UNIVERSITY LETI   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

Aluminum nitride; Photo conductivity; Structure properties; UV detectors

Indexed keywords

ALUMINUM NITRIDE; CRYSTAL MICROSTRUCTURE; MAGNETRON SPUTTERING; PHOTOCONDUCTIVITY; POLYCRYSTALLINE MATERIALS; SANDWICH STRUCTURES; ULTRAVIOLET DETECTORS; ULTRAVIOLET RADIATION;

CRYSTALLITES; DARK CURRENTS; DIRECT CURRENT; STRUCTURE PROPERTIES;

SEMICONDUCTING FILMS;

EID: 3242660707     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2004.02.017     Document Type: Article

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