Initial study on the structure and optical properties of ZnO film on Si(1 1 1) substrate with a SiC buffer layer

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 33, Issue 1, 2006, Pages 263-267

  Sha, Z D ^a   Wang, J ^a   Chen, Z C ^a   Chen, A J ^a   Zhou, Z Y ^a   Wu, X M ^a   Zhuge, L J ^a  

^a SOOCHOW UNIVERSITY   (China)

Author keywords

A SiC buffer layer; Annealing temperature; Photoluminescence; Structure; ZnO films

Indexed keywords

ANNEALING; BUFFER CIRCUITS; EXCITONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAIN BOUNDARIES; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SILICON CARBIDE; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

A SIC BUFFER LAYER; ANNEALING TEMPERATURE; CRYSTAL QUALITY; RADIO FREQUENCY (RF) MAGNETRON SPUTTERING;

ZINC OXIDE;

EID: 33646939857     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2006.03.138     Document Type: Article

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