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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 10, 1998, Pages 5485-5489

Infrared absorption properties of nanocrystalline cubic SiC films

a KYUSHU INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

AES; Compressive strain; Excess carbon; Grain size; Hydrogen plasma sputtering; Infrared absorption; Nanocrystalline cubic SiC film; Peak shift; Si C stretching mode; TEM; XPS

Indexed keywords

CHEMICAL BONDS; COMPOSITION EFFECTS; COMPRESSIVE STRESS; GRAIN SIZE AND SHAPE; HYDROGEN; INFRARED RADIATION; LIGHT ABSORPTION; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SPUTTER DEPOSITION; STRAIN;

PLASMA SPUTTERING;

SEMICONDUCTING FILMS;

EID: 0032180070 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.5485 Document Type: Article

Times cited : (41)

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