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Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 346, Issue 1-3, 2005, Pages 186-192

The structure and photoluminescence properties of SiC films doped with Al

(3) Sha, Z D a Wu, X M a Zhuge, L J a

a SOOCHOW UNIVERSITY (China)

Author keywords

Annealing temperature; Photoluminescence; SiC films doped with Al; Structure

Indexed keywords

ALUMINUM; ANNEALING; COMPOSITE FILMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAGNETRON SPUTTERING; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON CARBIDE; STRUCTURE (COMPOSITION); THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING TEMPERATURES; CRYSTALLINE FORMATION; DOUBLE PEAK STRUCTURE; PHOTOLUMINESCENCE PROPERTIES; PHOTOLUMINESCENCE SPECTRUM; RF MAGNETRON SPUTTERING TECHNIQUE; SIC FILMS; SINGLE-CRYSTALLINE;

SILICON COMPOUNDS;

EID: 24944587226 PISSN: 03759601 EISSN: None Source Type: Journal
DOI: 10.1016/j.physleta.2005.07.048 Document Type: Article

Times cited : (13)

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