Heteroepitaxy of ZnO film on Si (111) substrate using a 3C-SiC buffer layer

Thin Solid Films

Volumn 478, Issue 1-2, 2005, Pages 218-222

  Zhu, Junjie ^a   Lin, Bixia ^a   Sun, Xiankai ^a   Yao, Ran ^a   Shi, Chaoshu ^a   Fu, Zhuxi ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

MOCVD; Photoluminescence; SiC buffer layer; Structure model; ZnO films

Indexed keywords

CHARGE COUPLED DEVICES; CRYSTAL LATTICES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOCHROMATORS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON WAFERS; STOICHIOMETRY; SUBSTRATES; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

LATTICE MISMATCH; SIC BUFFER LAYERS; STRUCTURE MODELS; ZNO FILMS;

THIN FILMS;

EID: 14544271493     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.068     Document Type: Article

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