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Volumn 33, Issue 1 PART 1, 1997, Pages 432-437

Silicon carbide thyristors for electric guns

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTROMAGNETIC LAUNCHERS; SEMICONDUCTOR SWITCHES; SILICON CARBIDE;

EID: 0030675253     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.560051     Document Type: Article
Times cited : (28)

References (14)
  • 2
    • 0001408349 scopus 로고
    • The use of thyristors as main switches in EML applications
    • Jan.
    • Emil Spahn, G. Buderer, J. Wey, V. Wegner, F. Jamet, "The use of thyristors as main switches in EML applications," IEEE Trans. on Magnetics, vol. 29, no. 1, p. 1060-1065, Jan. 1993.
    • (1993) IEEE Trans. on Magnetics , vol.29 , Issue.1 , pp. 1060-1065
    • Spahn, E.1    Buderer, G.2    Wey, J.3    Wegner, V.4    Jamet, F.5
  • 4
    • 21544461610 scopus 로고
    • Large band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
    • 1 August
    • H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdiv, and M. Bums, "Large band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies," J. Appl. Phys., vol. 76, no. 3, 1 August 1994.
    • (1994) J. Appl. Phys. , vol.76 , Issue.3
    • Morkoc, H.1    Strite, S.2    Gao, G.B.3    Lin E, M.4    Sverdiv, B.5    Bums, M.6
  • 5
    • 0001596192 scopus 로고
    • Power semiconductors empirical diagrams expressing life as a function of temperature excursion
    • Jan.
    • Istvan L. Somos,"Power semiconductors empirical diagrams expressing life as a function of temperature excursion," IEEE Trans. on Magnetics, vol. 29, no. 1, p. 517-522, Jan. 1993.
    • (1993) IEEE Trans. on Magnetics , vol.29 , Issue.1 , pp. 517-522
    • Somos, I.L.1
  • 12
    • 36449001536 scopus 로고
    • Long minority carrier lifetimes in 6H SiC grown by chemical vapor deposition
    • Jan.
    • O. Kordina, J. P. Bergman, A Henry, and E. Janzen, "Long minority carrier lifetimes in 6H SiC grown by chemical vapor deposition," Appl. Phys. Lett., vol. 66, no. 2, p. 189-191,9 Jan. 1995.
    • (1995) Appl. Phys. Lett. , vol.66 , Issue.2 , pp. 189-191
    • Kordina, O.1    Bergman, J.P.2    Henry, A.3    Janzen, E.4
  • 13
    • 33747901425 scopus 로고
    • Temperature dependence of avalanche breakdown voltage of pn-junctions in 6H-SiC at high current density
    • K.V. Vassilevski, A V. Zorenko and V. V. Novozhilov, "Temperature dependence of avalanche breakdown voltage of pn-junctions in 6H-SiC at high current density," Inst. Phys. Conf. Ser. No. 137, p. 659-661, 1993.
    • (1993) Inst. Phys. Conf. Ser. No. , vol.137 , pp. 659-661
    • Vassilevski, K.V.1    Zorenko, A.V.2    Novozhilov, V.V.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.