Switching characteristics of 3kV 4H-SiC GTO thyristors

Annual Device Research Conference Digest

Volumn , Issue , 2000, Pages 135-136

  Fedison, J B ^a   Chow, T P ^a   Agarwal, A ^a   Ryu, S ^a   Singh, R ^a   Kordina, O ^a   Palmour, J ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CARRIER MOBILITY; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; IONIZATION; NITROGEN; SILICON CARBIDE; SWITCHING; TEMPERATURE; THRESHOLD VOLTAGE;

ACCEPTOR IONIZATION; BLOCKING VOLTAGE; CURRENT HANDLING CAPABILITY; JUNCTION TERMINATION EXTENSION; TURN OFF; TURN OFF GAIN;

THYRISTORS;

EID: 0033645695     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)