Silicon carbide power devices: Hopeful or hopeless?

IEE Colloquium (Digest)

Volumn , Issue 104, 1999, Pages 57-61

  Johnson, C Mark ^a   Wright, Nick G ^a   Ortolland, Sylvie ^a   Morrison, Dominique ^a   Adachi, Kazuhiro ^a   O'Neill, Anthony ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP; CHANNEL MOBILITY; POWER DEVICES; VOLTAGE BLOCKING;

CARRIER CONCENTRATION; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; MOSFET DEVICES; SILICON CARBIDE; TRANSCONDUCTANCE;

POWER ELECTRONICS;

EID: 6344258889     PISSN: 09633308     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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