Dislocation reduction and structural properties of GaN layers grown on N+-implanted AIN/Si (111) substrates

Materials Research Society Symposium Proceedings

Volumn 892, Issue , 2006, Pages 537-542

  Jamil, M ^a   Grandusky, J R ^a   Jindal, V ^a   Tripathi, N ^a   Shahedipour Sandvik, F ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; X RAY DIFFRACTION ANALYSIS;

BLUE LUMINESCENCE BAND RATIO; DEFECTIVE LAYER; DISLOCATION REDUCTION;

GALLIUM NITRIDE;

EID: 33646386678     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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