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Volumn 42, Issue 1-3, 1996, Pages 230-234
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Cathodoluminescence study of GaN epitaxial layers
a a b b b c c c |
Author keywords
Cathodoluminescence; Photoluminescence; Scanning electron microscopy
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Indexed keywords
CATHODOLUMINESCENCE;
EMISSION SPECTROSCOPY;
EXCITONS;
GRAIN BOUNDARIES;
PHOTOLUMINESCENCE;
SCANNING ELECTRON MICROSCOPY;
EPITAXIAL LAYERS;
EXCITATION DENSITY;
GALLIUM NITRIDE;
TIME RESOLVED PHOTOLUMINESCENCE (TRPL) MEASUREMENTS;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0001687018
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(96)01712-6 Document Type: Article |
Times cited : (28)
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References (10)
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