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Volumn 42, Issue 1-3, 1996, Pages 230-234

Cathodoluminescence study of GaN epitaxial layers

Author keywords

Cathodoluminescence; Photoluminescence; Scanning electron microscopy

Indexed keywords

CATHODOLUMINESCENCE; EMISSION SPECTROSCOPY; EXCITONS; GRAIN BOUNDARIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY;

EPITAXIAL LAYERS; EXCITATION DENSITY; GALLIUM NITRIDE; TIME RESOLVED PHOTOLUMINESCENCE (TRPL) MEASUREMENTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0001687018 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(96)01712-6 Document Type: Article

Times cited : (28)

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