Investigation of characteristics of laterally overgrown GaN on striped sapphire substrates patterned by wet chemical etching

Journal of Crystal Growth

Volumn 290, Issue 2, 2006, Pages 398-404

  Wang, Jing ^a   Guo, L W ^a   Jia, H Q ^a   Xing, Z G ^a   Wang, Y ^a   Yan, J F ^a   Yu, N S ^a   Chen, H ^a   Zhou, J M ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

A1. Scanning electron microscopy; A1. Wing tilt; A1. X ray diffraction; A3. MOCVD; A3. Selective epitaxy; B1. Nitrides

Indexed keywords

ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PARAMETER ESTIMATION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; THIN FILMS; X RAY DIFFRACTION;

DIFFRACTION PEAKS; SELECTIVE EPITAXY; WET CHEMICAL ETCHING; WING TILT;

GALLIUM NITRIDE;

EID: 33646370244     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.02.020     Document Type: Article

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