Origin of selective growth of GaN on maskless V-grooved sapphire substrates by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 28-32, 2005, Pages

  Wang, Jing ^a   Guo, Li Wei ^a   Jia, Hai Qiang ^a   Xing, Zhi Gang ^a   Wang, Yang ^a   Chen, Hong ^a   Zhou, Jun Ming ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

Atomic migration; GaN; Lateral epitaxial overgrowth; MOCVD; Patterned substrate

Indexed keywords

ETCHING; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; X RAY ANALYSIS;

ATOMIC MIGRATION; LATERAL EPITAXIAL GROWTH; PATTERNED SUBSTRATE;

SAPPHIRE;

EID: 29044442454     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L982     Document Type: Article

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