Reverse characteristics of pn diodes on 4H-SiC(000-1) C and (11-20) face

Applied Physics Letters

Volumn 84, Issue 10, 2004, Pages 1774-1776

  Tanaka, Yasunori ^a   Fukuda, Kenji ^a   Arai, Kazuo ^a   Kojima, Kazutoshi ^b   Suzuki, Takaya ^b   Yatsuo, Tsutomu ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b R and D Assoc Fut Electron Devices   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; ION IMPLANTATION; LEAKAGE CURRENTS; LIGHT EMISSION; OPTIMIZATION; SILICON; SILICON CARBIDE;

DRIFT LAYERS; ENERGY IMPLANTATION;

SEMICONDUCTOR DIODES;

EID: 1842479593     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1652235     Document Type: Article

References (6)

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