SCOPUS 정보 검색 플랫폼

Volumn 4, Issue 1-3, 2001, Pages 181-186

Material characterization need for SiC-based devices

Author keywords

[No Author keywords available]

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; NONDESTRUCTIVE EXAMINATION; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

CARRIER LIFETIME;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0035246843 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/S1369-8001(00)00135-9 Document Type: Article

Times cited : (42)

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