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Volumn 76, Issue C, 2003, Pages 261-324

Chapter 6 Transport and defect properties of intrinsic and boron-doped diamond

Author keywords

[No Author keywords available]

Indexed keywords

BORON DOPED DIAMOND; DEFECT PROPERTY;

EID: 33646201032     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(03)80008-X     Document Type: Article
Times cited : (14)

References (106)
  • 3
    • 77956970528 scopus 로고
    • Polykristalline Diamantschichten für elektronische Anwendungen
    • Universität Hamburg
    • Boettger E. Polykristalline Diamantschichten für elektronische Anwendungen. PhD Thesis (1995), Universität Hamburg 95
    • (1995) PhD Thesis , pp. 95
    • Boettger, E.1
  • 4
    • 0030106639 scopus 로고    scopus 로고
    • Boron-doped homoepitaxial diamond layers: fabrication, characterization and electronic applications
    • Borst T.H., and Weis O. Boron-doped homoepitaxial diamond layers: fabrication, characterization and electronic applications. Phys. Status Solidi A 154 (1996) 423-444
    • (1996) Phys. Status Solidi A , vol.154 , pp. 423-444
    • Borst, T.H.1    Weis, O.2
  • 5
    • 0012534935 scopus 로고
    • Electronic properties of amorphous carbon films
    • Bredas J.L., and Street G.B. Electronic properties of amorphous carbon films. J. Phys. C: Solid State Phys 18 21 (1985) L651-L655
    • (1985) J. Phys. C: Solid State Phys , vol.18 , Issue.21
    • Bredas, J.L.1    Street, G.B.2
  • 8
    • 50749135476 scopus 로고
    • The characterisation of point defects in diamond by luminescence spectroscopy
    • Collins A.T. The characterisation of point defects in diamond by luminescence spectroscopy. Diamond Relat. Mater. 1 5/6 (1992) 457-469
    • (1992) Diamond Relat. Mater. , vol.1 , Issue.5-6 , pp. 457-469
    • Collins, A.T.1
  • 9
    • 0010098611 scopus 로고
    • Breakdown field and saturation carrier velocity in diamond
    • Properties and Growth of Diamond. Davies G. (Ed), INSPEC Publications
    • Collins A.T. Breakdown field and saturation carrier velocity in diamond. In: Davies G. (Ed). Properties and Growth of Diamond. Emis Data Reviews Series No. 9 (1994), INSPEC Publications 288-289
    • (1994) Emis Data Reviews Series No. 9 , pp. 288-289
    • Collins, A.T.1
  • 10
    • 0009592521 scopus 로고
    • n-Type conduction and electron mobility in diamond
    • Properties and Growth of Diamond. Davies G. (Ed), INSPEC Publications
    • Collins A.T. n-Type conduction and electron mobility in diamond. In: Davies G. (Ed). Properties and Growth of Diamond. Emis Data Reviews Series No. 9 (1994), INSPEC Publications 284-287
    • (1994) Emis Data Reviews Series No. 9 , pp. 284-287
    • Collins, A.T.1
  • 11
    • 0031996101 scopus 로고    scopus 로고
    • The annealing of interstitial-related optical centres in type II natural and CVD diamond
    • Collins A.T., Allers L., and Hiscock J. The annealing of interstitial-related optical centres in type II natural and CVD diamond. Diamond Relat. Mater. 7 2-5 (1998) 228-232
    • (1998) Diamond Relat. Mater. , vol.7 , Issue.2-5 , pp. 228-232
    • Collins, A.T.1    Allers, L.2    Hiscock, J.3
  • 12
    • 0040866748 scopus 로고
    • Acceptor-impurity infrared absorption in semiconducting synthetic diamond
    • Collins A.T., Dean P.J., Lightowlers E.C., and Sherman W.F. Acceptor-impurity infrared absorption in semiconducting synthetic diamond. Phys Rev. 140 (1965) A1272-A1274
    • (1965) Phys Rev. , vol.140
    • Collins, A.T.1    Dean, P.J.2    Lightowlers, E.C.3    Sherman, W.F.4
  • 14
    • 0014535142 scopus 로고
    • Role of phonons in the oscillatory photoconductivity spectrum of semiconducting diamond
    • Collins A.T., Lightowlers E.C., and Dean P.J. Role of phonons in the oscillatory photoconductivity spectrum of semiconducting diamond. Phys. Rev. 183 (1969) 725-730
    • (1969) Phys. Rev. , vol.183 , pp. 725-730
    • Collins, A.T.1    Lightowlers, E.C.2    Dean, P.J.3
  • 15
    • 0001975567 scopus 로고
    • Photocapacity measurements on natural semiconducting diamond
    • Collins A.T., and Rafique S. Photocapacity measurements on natural semiconducting diamond. J. Phys. C: Solid State Phys. 11 7 (1978) 1375-1380
    • (1978) J. Phys. C: Solid State Phys. , vol.11 , Issue.7 , pp. 1375-1380
    • Collins, A.T.1    Rafique, S.2
  • 16
    • 36149003891 scopus 로고
    • Intrinsic and Extrinsic Recombination Radiation from Natural and Synthetic Aluminum-Doped Diamond
    • Dean P.J., Lightowlers E.C., and Wight D.R. Intrinsic and Extrinsic Recombination Radiation from Natural and Synthetic Aluminum-Doped Diamond. Phys. Rev. 140 (1965) A352-A368
    • (1965) Phys. Rev. , vol.140
    • Dean, P.J.1    Lightowlers, E.C.2    Wight, D.R.3
  • 17
    • 0000440722 scopus 로고
    • On the substitutional nitrogen in diamond
    • Farrer R.G. On the substitutional nitrogen in diamond. Solid State Commun. 7 (1969) 685-688
    • (1969) Solid State Commun. , vol.7 , pp. 685-688
    • Farrer, R.G.1
  • 18
    • 0000922476 scopus 로고
    • High-field transport in wide-band-gap semiconductors
    • Ferry D.K. High-field transport in wide-band-gap semiconductors. Phys. Rev. B 12 (1975) 2361-2369
    • (1975) Phys. Rev. B , vol.12 , pp. 2361-2369
    • Ferry, D.K.1
  • 19
    • 11744341266 scopus 로고
    • The analysis of photoelectric sensitivity curves for clean metals at various temperatures
    • Fowler R.H. The analysis of photoelectric sensitivity curves for clean metals at various temperatures. Phys. Rev. 38 (1931) 45-56
    • (1931) Phys. Rev. , vol.38 , pp. 45-56
    • Fowler, R.H.1
  • 20
    • 0012534758 scopus 로고    scopus 로고
    • Diamond SAW devices
    • Properties, Growth and Applications of Diamond. Nazare M.H., and Neves A.J. (Eds), INSPEC Publications
    • Fox A.B., and Dreifus D.L. Diamond SAW devices. In: Nazare M.H., and Neves A.J. (Eds). Properties, Growth and Applications of Diamond. Emis Data Reviews Series No. 26 (2001), INSPEC Publications 375-385
    • (2001) Emis Data Reviews Series No. 26 , pp. 375-385
    • Fox, A.B.1    Dreifus, D.L.2
  • 22
    • 0030787205 scopus 로고    scopus 로고
    • Characterization of textured polycrystalline diamond by electron spin resonance spectroscopy
    • Graeff C.F.O., Nebel C.E., Stutzmann M., Flöter A., and Zachai R. Characterization of textured polycrystalline diamond by electron spin resonance spectroscopy. J. Appl. Phys. 81 (1997) 234-237
    • (1997) J. Appl. Phys. , vol.81 , pp. 234-237
    • Graeff, C.F.O.1    Nebel, C.E.2    Stutzmann, M.3    Flöter, A.4    Zachai, R.5
  • 24
    • 0016510879 scopus 로고
    • Spectral distribution of photoionization cross sections by photoconductivity measurements
    • Grimmeiss H.G., and Ledebo L.-A. Spectral distribution of photoionization cross sections by photoconductivity measurements. J. Appl. Phys. 46 (1975) 2155-2162
    • (1975) J. Appl. Phys. , vol.46 , pp. 2155-2162
    • Grimmeiss, H.G.1    Ledebo, L.-A.2
  • 26
    • 2142652960 scopus 로고    scopus 로고
    • Thermal transport in diamond
    • Properties, Growth and Applications of Diamond. Nazare M.H., and Neves A.J. (Eds), INSPEC Publications
    • Hartmann J., and Reichling M. Thermal transport in diamond. In: Nazare M.H., and Neves A.J. (Eds). Properties, Growth and Applications of Diamond. Emis Data Reviews Series No. 26 (2001), INSPEC Publications 32-39
    • (2001) Emis Data Reviews Series No. 26 , pp. 32-39
    • Hartmann, J.1    Reichling, M.2
  • 27
    • 0017439537 scopus 로고
    • Electrical, structural and optical properties of amorphous carbon
    • Hauser J.J. Electrical, structural and optical properties of amorphous carbon. J. Non-Cryst. Solids 23 (1977) 21-41
    • (1977) J. Non-Cryst. Solids , vol.23 , pp. 21-41
    • Hauser, J.J.1
  • 29
    • 0010778173 scopus 로고
    • Zum Mechanismus des lichtelektrischen Primärstromes in isolierenden Kristallen
    • Hecht K. Zum Mechanismus des lichtelektrischen Primärstromes in isolierenden Kristallen. Zeitschrift für Physik 77 (1932) 235-245
    • (1932) Zeitschrift für Physik , vol.77 , pp. 235-245
    • Hecht, K.1
  • 30
    • 0001536873 scopus 로고    scopus 로고
    • Reliability of Hall effect measurements on chemical vapor deposited polycrystalline B-doped diamond films
    • Huang J.T., Guo W.H., Hwang J., and Chang H. Reliability of Hall effect measurements on chemical vapor deposited polycrystalline B-doped diamond films. Appl. Phys. Lett. 68 (1996) 3784-3786
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 3784-3786
    • Huang, J.T.1    Guo, W.H.2    Hwang, J.3    Chang, H.4
  • 31
    • 21944441153 scopus 로고
    • Deep impurities in semiconductors: II. The optical cross section
    • Inkson C. Deep impurities in semiconductors: II. The optical cross section. J. Phys. C 14 (1981) 1093-1101
    • (1981) J. Phys. C , vol.14 , pp. 1093-1101
    • Inkson, C.1
  • 33
    • 0000496433 scopus 로고
    • Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
    • Jackson W.B., and Amer N.M. Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy. Phys. Rev. B 25 (1982) 5559-5562
    • (1982) Phys. Rev. B , vol.25 , pp. 5559-5562
    • Jackson, W.B.1    Amer, N.M.2
  • 34
    • 0000636416 scopus 로고
    • Diamond epitaxy on (001) silicon: an interface investigation
    • Jiang X., and Jia C.L. Diamond epitaxy on (001) silicon: an interface investigation. Appl. Phys. Lett. 67 (1995) 1197-1199
    • (1995) Appl. Phys. Lett. , vol.67 , pp. 1197-1199
    • Jiang, X.1    Jia, C.L.2
  • 36
    • 0001766379 scopus 로고    scopus 로고
    • Coalescence and overgrowth of diamond grains from improved heteroepitaxy on silicon (001)
    • Jiang X., Schiffmann K., Klages C.-P., Wittorf D., Jia C.L., and Urban K. Coalescence and overgrowth of diamond grains from improved heteroepitaxy on silicon (001). J. Appl. Phys. 83 (1998) 2511-2518
    • (1998) J. Appl. Phys. , vol.83 , pp. 2511-2518
    • Jiang, X.1    Schiffmann, K.2    Klages, C.-P.3    Wittorf, D.4    Jia, C.L.5    Urban, K.6
  • 37
    • 0032660974 scopus 로고    scopus 로고
    • In situ boron doping of chemical vapor-deposited diamond films
    • Jiang X., Willich P., Paul M., and Klages C.-P. In situ boron doping of chemical vapor-deposited diamond films. J. Mater. Res. 14 (1999) 3211-3220
    • (1999) J. Mater. Res. , vol.14 , pp. 3211-3220
    • Jiang, X.1    Willich, P.2    Paul, M.3    Klages, C.-P.4
  • 39
    • 0031078739 scopus 로고    scopus 로고
    • Loss of electrical conductivity in boron-doped diamond due to ion-induced damage
    • Kalish R., Uzan-Saguy C., Philosoph B., Richter V., and Prawer S. Loss of electrical conductivity in boron-doped diamond due to ion-induced damage. Appl. Phys. Lett. 70 (1997) 999-1001
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 999-1001
    • Kalish, R.1    Uzan-Saguy, C.2    Philosoph, B.3    Richter, V.4    Prawer, S.5
  • 40
    • 36449009147 scopus 로고
    • Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrate via high quality silicon carbide buffer layers
    • Kawarada H., Suesada T., and Nagasawa H. Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrate via high quality silicon carbide buffer layers. Appl. Phys. Lett. 66 (1995) 583-585
    • (1995) Appl. Phys. Lett. , vol.66 , pp. 583-585
    • Kawarada, H.1    Suesada, T.2    Nagasawa, H.3
  • 42
    • 0001702956 scopus 로고    scopus 로고
    • Electronic Raman and infrared spectra of acceptors in isotopically controlled blue diamonds
    • Kim H., Vogelgesang R., Ramdas A.K., Rodriguez S., Grimsditch M., and Anthony T.R. Electronic Raman and infrared spectra of acceptors in isotopically controlled blue diamonds. Phys. Rev. B 57 (1998) 15315-15327
    • (1998) Phys. Rev. B , vol.57 , pp. 15315-15327
    • Kim, H.1    Vogelgesang, R.2    Ramdas, A.K.3    Rodriguez, S.4    Grimsditch, M.5    Anthony, T.R.6
  • 43
    • 77956922672 scopus 로고
    • Seitz F., and Turnbull D. (Eds), Academic Press, New York
    • Kohn W. In: Seitz F., and Turnbull D. (Eds). Solid State Physics Vol. 5 (1957), Academic Press, New York 257
    • (1957) Solid State Physics , vol.5 , pp. 257
    • Kohn, W.1
  • 45
    • 0000456470 scopus 로고    scopus 로고
    • Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films
    • Koizumi S., Kamo M., Sato Y., Ozaki H., and Inuzuka T. Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films. Appl. Phys. Lett. 71 (1997) 1065-1067
    • (1997) Appl. Phys. Lett. , vol.71 , pp. 1065-1067
    • Koizumi, S.1    Kamo, M.2    Sato, Y.3    Ozaki, H.4    Inuzuka, T.5
  • 46
    • 0016081559 scopus 로고
    • Deep-level transient spectrocopy: a new method to characterize traps in semiconductors
    • Lang D.V. Deep-level transient spectrocopy: a new method to characterize traps in semiconductors. J. Appl. Phys. 45 (1974) 3023-3032
    • (1974) J. Appl. Phys. , vol.45 , pp. 3023-3032
    • Lang, D.V.1
  • 48
    • 21544478131 scopus 로고
    • Nitrogen stabilized <100>, texture in chemical vapor deposited diamond films
    • Locher R., Wild C., Herres N., Behr D., and Koidl P. Nitrogen stabilized <100>, texture in chemical vapor deposited diamond films. Appl. Phys. Lett. 65 (1994) 34-36
    • (1994) Appl. Phys. Lett. , vol.65 , pp. 34-36
    • Locher, R.1    Wild, C.2    Herres, N.3    Behr, D.4    Koidl, P.5
  • 49
    • 0012652348 scopus 로고
    • Electronic band structure of diamond
    • Properties and Growth of Diamond. Davies G. (Ed), INSPEC Publications
    • Mainwood A. Electronic band structure of diamond. In: Davies G. (Ed). Properties and Growth of Diamond. Emis Data Reviews Series No. 9 (1994), INSPEC Publications 3-8
    • (1994) Emis Data Reviews Series No. 9 , pp. 3-8
    • Mainwood, A.1
  • 50
    • 0012482755 scopus 로고
    • Optical constants of diamond in
    • Properties and Growth of Diamond. Davies G. (Ed), INSPEC Publications
    • Mainwood A. Optical constants of diamond in. In: Davies G. (Ed). Properties and Growth of Diamond. Emis Data Reviews Series No. 9 (1994), INSPEC Publications 9-12
    • (1994) Emis Data Reviews Series No. 9 , pp. 9-12
    • Mainwood, A.1
  • 52
    • 0038420451 scopus 로고
    • Defects at low temperature in electron-irradiated diamond
    • Massarani B., and Bourgaoin J.C. Defects at low temperature in electron-irradiated diamond. Phys. Rev. B 14 (1976) 3682-3689
    • (1976) Phys. Rev. B , vol.14 , pp. 3682-3689
    • Massarani, B.1    Bourgaoin, J.C.2
  • 53
    • 0028374363 scopus 로고
    • The migration of interstitial H in diamond and its pairing with substitutional B and N: molecular orbital theory
    • Mehandru S.P., and Anderson A.B. The migration of interstitial H in diamond and its pairing with substitutional B and N: molecular orbital theory. J. Mater. Res. 9 (1994) 383-386
    • (1994) J. Mater. Res. , vol.9 , pp. 383-386
    • Mehandru, S.P.1    Anderson, A.B.2
  • 54
    • 0010936774 scopus 로고
    • Semiconductor Surfaces and Interfaces
    • Springer, Berlin
    • Mönch W. Semiconductor Surfaces and Interfaces. Surface Sciences (1995), Springer, Berlin 368
    • (1995) Surface Sciences , pp. 368
    • Mönch, W.1
  • 55
    • 0037346728 scopus 로고    scopus 로고
    • Electronic properties of CVD diamond
    • Semiconductor Science and Technology. Jackman R. (Ed) 3
    • Nebel C.E. Electronic properties of CVD diamond. In: Jackman R. (Ed). Semiconductor Science and Technology. Special Issue: Diamond Electronic Vol. 18 (2003) S1-S11 3
    • (2003) Special Issue: Diamond Electronic , vol.18
    • Nebel, C.E.1
  • 57
    • 0001767457 scopus 로고    scopus 로고
    • Electronic properties of CVD and synthetic diamond
    • Nebel C.E., Münz J., and Stutzmann M. Electronic properties of CVD and synthetic diamond. Phys. Rev. 55 (1997) 9786-9791
    • (1997) Phys. Rev. , vol.55 , pp. 9786-9791
    • Nebel, C.E.1    Münz, J.2    Stutzmann, M.3
  • 58
    • 0012536268 scopus 로고    scopus 로고
    • Long living excited states in boron doped diamond
    • Nebel C.E., Rohrer J., and Stutzmann M. Long living excited states in boron doped diamond. J. Appl. Phys. 89 4 (2001) 2237-2240
    • (2001) J. Appl. Phys. , vol.89 , Issue.4 , pp. 2237-2240
    • Nebel, C.E.1    Rohrer, J.2    Stutzmann, M.3
  • 59
    • 77956972652 scopus 로고
    • Electron and hole transport in a-Si: H at high field and low temperature
    • Nebel C.E., and Street R.A. Electron and hole transport in a-Si: H at high field and low temperature. Mater. Res. Soc. Symp. Proc. 258 (1992) 830-852
    • (1992) Mater. Res. Soc. Symp. Proc. , vol.258 , pp. 830-852
    • Nebel, C.E.1    Street, R.A.2
  • 61
    • 0000664833 scopus 로고
    • High-electric-field transport in a-Si: H. I. Transient photoconductivity
    • Nebel C.E., Street R.A., Johnson N.M., and Tsai C.C. High-electric-field transport in a-Si: H. I. Transient photoconductivity. Phys. Rev. B. 46 (1992) 6789-6802
    • (1992) Phys. Rev. B. , vol.46 , pp. 6789-6802
    • Nebel, C.E.1    Street, R.A.2    Johnson, N.M.3    Tsai, C.C.4
  • 62
    • 0004106719 scopus 로고    scopus 로고
    • Transport properties of diamond: carrier mobility and resistivity
    • Properties, Growth and Applications of Diamond. Nazare M.H., and Neves A.J. (Eds), INSPEC Publication
    • Nebel C.E., and Stutzmann M. Transport properties of diamond: carrier mobility and resistivity. In: Nazare M.H., and Neves A.J. (Eds). Properties, Growth and Applications of Diamond. Emis Data Reviews Series No. 26 (2001), INSPEC Publication 40-52
    • (2001) Emis Data Reviews Series No. 26 , pp. 40-52
    • Nebel, C.E.1    Stutzmann, M.2
  • 65
  • 66
    • 0001452446 scopus 로고    scopus 로고
    • Dominant defect levels in diamond thin films: a photocurrent and electron paramagnetic resonance study
    • Nesladek M., Stals L.M., Stesmans A., Iakoubovskij K., and Adriaenssens G.J. Dominant defect levels in diamond thin films: a photocurrent and electron paramagnetic resonance study. Appl. Phys. Lett. 72 (1998) 3306-3308
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 3306-3308
    • Nesladek, M.1    Stals, L.M.2    Stesmans, A.3    Iakoubovskij, K.4    Adriaenssens, G.J.5
  • 67
    • 0030106638 scopus 로고    scopus 로고
    • Defect induced optical absorption in CVD diamond films
    • Nesladek M., Vanecek M., and Stals M.L. Defect induced optical absorption in CVD diamond films. Phys. Status Solidi A 154 (1996) 283-303
    • (1996) Phys. Status Solidi A , vol.154 , pp. 283-303
    • Nesladek, M.1    Vanecek, M.2    Stals, M.L.3
  • 68
    • 0040771894 scopus 로고
    • The Hall effect in polycrystalline and powdered semiconductors
    • Orton J.W., and Powell M.J. The Hall effect in polycrystalline and powdered semiconductors. Rep. Prog. Phys. 43 11 (1980) 1263-1307
    • (1980) Rep. Prog. Phys. , vol.43 , Issue.11 , pp. 1263-1307
    • Orton, J.W.1    Powell, M.J.2
  • 74
    • 5944241053 scopus 로고    scopus 로고
    • Growth of diamond films on boron nitride thin films by bias-assisted hot filament chemical vapour deposition
    • Polo M.C., Sanchez G., Wang W.L., Esteve J., and Andujar J.L. Growth of diamond films on boron nitride thin films by bias-assisted hot filament chemical vapour deposition. Appl. Phys. Lett. 70 (1997) 1682-1684
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 1682-1684
    • Polo, M.C.1    Sanchez, G.2    Wang, W.L.3    Esteve, J.4    Andujar, J.L.5
  • 75
    • 36149019784 scopus 로고
    • Electronic Hall effect in diamond
    • Redfield A.G. Electronic Hall effect in diamond. Phys. Rev. 94 (1954) 526-537
    • (1954) Phys. Rev. , vol.94 , pp. 526-537
    • Redfield, A.G.1
  • 77
    • 84936722625 scopus 로고
    • π-Bonded clusters in amorphous carbon materials
    • Robertson J. π-Bonded clusters in amorphous carbon materials. Philos. Mag. B 66 (1992) 199-209
    • (1992) Philos. Mag. B , vol.66 , pp. 199-209
    • Robertson, J.1
  • 78
    • 30244535151 scopus 로고
    • Electronic and atomic structure of amorphous carbon
    • Robertson J., and O'Reilly E.P. Electronic and atomic structure of amorphous carbon. Phys. Rev. B 35 (1987) 2946-2957
    • (1987) Phys. Rev. B , vol.35 , pp. 2946-2957
    • Robertson, J.1    O'Reilly, E.P.2
  • 79
    • 77956975398 scopus 로고    scopus 로고
    • Abstreiter G., Stutzmann M., and Vogl P. (Eds), Walter Schottky Institute, Technische Universität München
    • Rohrer E. In: Abstreiter G., Stutzmann M., and Vogl P. (Eds). Photoleitungs-Spektroskopie von Diamant. Selected Topics of Semiconductor Physics and Technology Vol. 10 (1998), Walter Schottky Institute, Technische Universität München
    • (1998) Selected Topics of Semiconductor Physics and Technology , vol.10
    • Rohrer, E.1
  • 82
    • 0000440022 scopus 로고    scopus 로고
    • Diamond nucleation on iridium buffer layers and subsequent textured growth: a route for the realization of single-crystalline diamond films
    • Schreck M., Hörmann F., Roll H., Lindner J.K.N., and Stritzker B. Diamond nucleation on iridium buffer layers and subsequent textured growth: a route for the realization of single-crystalline diamond films. Appl. Phys. Lett. 78 (2001) 192-194
    • (2001) Appl. Phys. Lett. , vol.78 , pp. 192-194
    • Schreck, M.1    Hörmann, F.2    Roll, H.3    Lindner, J.K.N.4    Stritzker, B.5
  • 84
    • 0000873052 scopus 로고    scopus 로고
    • Higher resolution studies of shallow bound exciton luminescence in diamond
    • Sharp S.J., Collins A.T., Davies G., and Joyce G.S. Higher resolution studies of shallow bound exciton luminescence in diamond. J. Phys.: Condens. Matter 9 33 (1997) L451-L455
    • (1997) J. Phys.: Condens. Matter , vol.9 , Issue.33
    • Sharp, S.J.1    Collins, A.T.2    Davies, G.3    Joyce, G.S.4
  • 86
    • 0021374872 scopus 로고
    • Optical constants of a hydrogenated amorphous carbon film
    • Smith F. Optical constants of a hydrogenated amorphous carbon film. J. Appl. Phys. 55 (1984) 764-771
    • (1984) J. Appl. Phys. , vol.55 , pp. 764-771
    • Smith, F.1
  • 87
    • 36149014813 scopus 로고
    • Electron-spin resonance of nitrogen donors in diamond
    • Smith W.V., Sorokin P.P., Gelles I.L., and Lasher G.J. Electron-spin resonance of nitrogen donors in diamond. Phys. Rev. 115 (1959) 1546-1552
    • (1959) Phys. Rev. , vol.115 , pp. 1546-1552
    • Smith, W.V.1    Sorokin, P.P.2    Gelles, I.L.3    Lasher, G.J.4
  • 88
    • 36149053424 scopus 로고
    • Optical phonon effects in the infra-red spectrum of acceptor centres in semiconducting diamond
    • Smith S.D., and Taylor W. Optical phonon effects in the infra-red spectrum of acceptor centres in semiconducting diamond. Proc. Phys. Soc. 79 (1962) 1142-1153
    • (1962) Proc. Phys. Soc. , vol.79 , pp. 1142-1153
    • Smith, S.D.1    Taylor, W.2
  • 89
    • 0000467858 scopus 로고
    • Hall effect measurements on boron-doped, highly oriented diamond films grown on silicon via microwave plasma chemical vapor deposition
    • Stoner B.R., Kao C.-T., Malta D.M., and Glass R.C. Hall effect measurements on boron-doped, highly oriented diamond films grown on silicon via microwave plasma chemical vapor deposition. Appl. Phys. Lett. 62 (1993) 2347-2349
    • (1993) Appl. Phys. Lett. , vol.62 , pp. 2347-2349
    • Stoner, B.R.1    Kao, C.-T.2    Malta, D.M.3    Glass, R.C.4
  • 90
    • 0012586597 scopus 로고
    • Trapping parameters of dangling bonds in hydrogenated amorphous silicon
    • Street R.A. Trapping parameters of dangling bonds in hydrogenated amorphous silicon. Appl. Phys. Lett. 41 (1982) 1060-1062
    • (1982) Appl. Phys. Lett. , vol.41 , pp. 1060-1062
    • Street, R.A.1
  • 91
    • 0001027027 scopus 로고
    • Measurements of depletion layers in hydrogenated amorphous silicon
    • Street R.A. Measurements of depletion layers in hydrogenated amorphous silicon. Phys. Rev. B 27 (1983) 4924-4932
    • (1983) Phys. Rev. B , vol.27 , pp. 4924-4932
    • Street, R.A.1
  • 92
    • 0001127806 scopus 로고
    • Thermal equilibration in doped amorphous silicon
    • Street R.A., Kakalios J., and Hayes T.M. Thermal equilibration in doped amorphous silicon. Phys. Rev. B 34 (1986) 3030-3033
    • (1986) Phys. Rev. B , vol.34 , pp. 3030-3033
    • Street, R.A.1    Kakalios, J.2    Hayes, T.M.3
  • 95
    • 0000448041 scopus 로고
    • Field drift of the hydrogen-related, acceptorneutralizing defect in diodes from hydrogenated silicon
    • Tavendale A.J., Alexiev D., and Williams A.A. Field drift of the hydrogen-related, acceptorneutralizing defect in diodes from hydrogenated silicon. Appl. Phys. Lett. 47 (1985) 316
    • (1985) Appl. Phys. Lett. , vol.47 , pp. 316
    • Tavendale, A.J.1    Alexiev, D.2    Williams, A.A.3
  • 96
    • 21544436781 scopus 로고
    • Enhancement of photosensitivity by ultraviolet irradiation and photoconductivity spectra of diamond thin films
    • Viatkus R., Inushima T., and Yamazaki S. Enhancement of photosensitivity by ultraviolet irradiation and photoconductivity spectra of diamond thin films. Appl. Phys. Lett. 62 (1993) 2384-2386
    • (1993) Appl. Phys. Lett. , vol.62 , pp. 2384-2386
    • Viatkus, R.1    Inushima, T.2    Yamazaki, S.3
  • 100
    • 77956962272 scopus 로고    scopus 로고
    • Abstreiter G., Amann M.-C., Stutzmann M., and Vogl P. (Eds)
    • Zeisel R. In: Abstreiter G., Amann M.-C., Stutzmann M., and Vogl P. (Eds). Optoelectronic Properties of Defects in Diamond and AlGaN Alloys. Selected Topics of Semiconductor Physics and Technology Vol. 36 (2001)
    • (2001) Selected Topics of Semiconductor Physics and Technology , vol.36
    • Zeisel, R.1
  • 101
    • 0000506438 scopus 로고    scopus 로고
    • Deep level transient spectroscopy of synthetic type IIb diamond
    • Zeisel R., Nebel C.E., and Stutzmann M. Deep level transient spectroscopy of synthetic type IIb diamond. J. Appl. Phys. 84 (1998) 6105-6108
    • (1998) J. Appl. Phys. , vol.84 , pp. 6105-6108
    • Zeisel, R.1    Nebel, C.E.2    Stutzmann, M.3
  • 102
    • 0032620598 scopus 로고    scopus 로고
    • Passivation of boron in diamond by deuterium
    • Zeisel R., Nebel C.E., and Stutzmann M. Passivation of boron in diamond by deuterium. Appl. Phys. Lett. 74 (1999) 1875-1876
    • (1999) Appl. Phys. Lett. , vol.74 , pp. 1875-1876
    • Zeisel, R.1    Nebel, C.E.2    Stutzmann, M.3
  • 103
    • 0033748134 scopus 로고    scopus 로고
    • Capacitance-voltage profiling of deuterium passivation and diffusion in diamond Schottky diodes
    • Zeisel R., Nebel C.E., and Stutzmann M. Capacitance-voltage profiling of deuterium passivation and diffusion in diamond Schottky diodes. Diamond Relat. Mater. 9 (2000) 413-416
    • (2000) Diamond Relat. Mater. , vol.9 , pp. 413-416
    • Zeisel, R.1    Nebel, C.E.2    Stutzmann, M.3
  • 104
    • 0001182666 scopus 로고    scopus 로고
    • Photocapacitance study of boron-doped, chemical vapour deposited diamond
    • Zeisel R., Nebel C.E., Stutzmann M., Gheeraert E., and Deneuville A. Photocapacitance study of boron-doped, chemical vapour deposited diamond. Phys. Rev. B 60 (1999) 2476-2479
    • (1999) Phys. Rev. B , vol.60 , pp. 2476-2479
    • Zeisel, R.1    Nebel, C.E.2    Stutzmann, M.3    Gheeraert, E.4    Deneuville, A.5


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