Diamond films epitaxially grown by step-flow mode

Journal of Crystal Growth

Volumn 183, Issue 3, 1998, Pages 338-346

  Hayashi, Kazushi ^a,c   Yamanaka, Sadanori ^a,d   Watanabe, Hideyuki ^a,e   Sekiguchi, Takashi ^b   Okushi, Hideyo ^a   Kajimura, Koji ^a,d  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c KOBE STEEL LTD   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

^e TOKAI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; CURRENT VOLTAGE CHARACTERISTICS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; EXCITONS; FILM GROWTH; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SURFACE STRUCTURE;

STEP FLOW MODE;

DIAMOND FILMS;

EID: 0032472115     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00433-8     Document Type: Article

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