CV and DLTS experiments in boron-doped diamond

Physica Status Solidi (A) Applied Research

Volumn 174, Issue 1, 1999, Pages 117-127

  Nebel, C E ^a   Zeisel, R ^a   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004659803     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199907)174:1<117::AID-PSSA117>3.0.CO;2-X     Document Type: Article

References (18)

1. A.T. COLLINS, in: Properties and Growth of Diamond, Ed. G. DAVIES, Emis Datareview Series, No. 9, INSPEC 1994 (p. 288).
2. T. VANDEVELDE, M. NESLADEK, K. MEYKENS, C. QUAEYHAEGENS, L.M. STALS, I. GOUZMAN, and A. HUFFMAN, Diamond Relat. Mater. 7, 152 (1981).
3. M. NESLADEK, L.M. STALS, A. STESMANS, K. IAKOUBOVSKU, G.J. ADRIENSSENS, J. ROSA, and M. VANECEK, Appl. Phys. Lett. 72, 3306 (1998).
4. D.V. LANG, J. Appl. Phys. 45, 3023 (1974).
5. R.H. FOWLER, Phys. Rev. 38, 45 (1931).
6. S.M. SZE, in: Physics of Semiconductor Devices, John Wiley & Sons, New York 1981 (p. 247).
7. W. MÖNCH, in: Semiconductor Surfaces and Interfaces, Ed. G. ERTL, Surface Sciences, Vol. 26, Springer-Verlag, Berlin/Heidelberg/New York 1995 (p. 368).
8. R. ZEISEL, C.E. NEBEL, and M. STUTZMANN, J. Appl. Phys. 84, 6105 (1998).
9. J.C. INKSON, J. Phys. C 14, 1093 (1981).
10. R. ZEISEL, C.E. NEBEL, M. STUTZMANN, E. GHEERAERT, and A. DENEUVILLE, Phys. Rev. B 60, in print.
11. A.T. COLLINS and S. RAFIQUE, J. Phys. C 11, 1375 (1978).
12. G. DAVIES, Chem. Phys. Carbon 13, 1 (1977).
13. J. CHEVALLIER, B. THEYS, A. LUSSON, C. GRATTEPAIN, A. DENEUVILLE, and E. GHEERAERT, Phys. Rev. B 58, 7966 (1998).
14. J. CHEVALLIER, D. BALLUTAUD, B. THEYS, F. JOMARD, A. DENEUVILLE, E. GHEERAERT, and F. PRUVOST, phys. stat. sol. (a) 174, 73 (1999) this issue.
15. M. STUTZMANN and J. CHEVALLIER (Eds.), Hydrogen in Semiconductors, Sixth Triest ICTP-IU-PAP Semiconductor Symposium 1990, North Holland, Series Eds. A. FROVA and E. TOSATTI, Amsterdam/New York 1990.
16. R. ZEISEL, C.E. NEBEL, and M. STUTZMANN, Appl. Phys. Lett. 74, 1875 (1999).
17. S.P. MEHANDRU and A.B. ANDERSON, J. Mater. Res. 9, 383 (1994).
18. H. KIYOTA, H. OKUSHI, K. OKANO, Y. AKIBA, T. KUROSU, and M. IIDA, Appl. Phys. Lett. 61, 1808 (1992).