Boron-doped homoepitaxial diamond layers: Fabrication, characterization, and electronic applications

Physica Status Solidi (A) Applied Research

Volumn 154, Issue 1, 1996, Pages 423-444

  Borst, T H ^a   Weis, O ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; FABRICATION; GOLD; LIGHT EMISSION; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING BORON; SEMICONDUCTOR JUNCTIONS; SILICA; SUBSTRATES; WIRE;

ATOMIC CONCENTRATION; GOLD WIRES; GREEN ELECTROLUMINESCENT LIGHT; HALL BARS; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION; NEUTRAL DOPANT ATOMS;

SEMICONDUCTING FILMS;

EID: 0030106639     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.2211540130     Document Type: Article

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