In situ monitoring and benchmarking in UHV of InP/GaAsSb heterointerface reconstructions prepared via MOVPE

Applied Surface Science

Volumn 252, Issue 12, 2006, Pages 4033-4038

  Kollonitsch, Z ^a   Schimper, H J ^a   Seidel, U ^a   Willig, F ^a   Hannappel, T ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

Antimonides; Low energy electron diffraction; Metalorganic vapor phase epitaxy; Reflectance anisotropy spectroscopy; Semiconducting ternary compounds; Surface reconstruction

Indexed keywords

LATTICE CONSTANTS; LOW ENERGY ELECTRON DIFFRACTION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

ANTIMONIDES; REFLECTANCE ANISOTROPY SPECTROSCOPY; SEMICONDUCTING TERNARY COMPOUNDS; SURFACE RECONSTRUCTION;

INDIUM COMPOUNDS;

EID: 33646190003     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.07.030     Document Type: Article

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