Non-blocking collector InP/GaAs0.51Sb0.49/InP double heterojunction bipolar transistors with a staggered lineup base-collector junction

IEEE Electron Device Letters

Volumn 20, Issue 4, 1999, Pages 155-157

  Bolognesi, C R ^a   Matine, N ^a   Dvorak, M W ^a   Xu, X G ^a   Hu, J ^a   Watkins, S P ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DHBT);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032639377     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.753751     Document Type: Article

References (15)

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