Characterization of epitaxial semiconductor growth by reflectance anisotropy spectroscopy and ellipsometry

Progress in Crystal Growth and Characterization of Materials

Volumn 35, Issue 1, 1997, Pages 27-98

  Zettler, J T ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Optical in situ spectroscopy; Real time monitoring; Semiconductor growth

Indexed keywords

ANISOTROPY; CHEMICAL BEAM EPITAXY; ELLIPSOMETRY; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SPECTROSCOPIC ANALYSIS; SURFACE PHENOMENA; SURFACE STRUCTURE;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); METALLORGANIC MOLECULAR BEAM EPITAXY (MOMBE); REFLECTANCE ANISOTROPY SPECTROSCOPY;

SEMICONDUCTOR GROWTH;

EID: 0031359695     PISSN: 09608974     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0960-8974(97)00024-7     Document Type: Article

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