Molecular beam epitaxial growth and characterization of InP/GaAsSb/InP double heterojunction bipolar transistors

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 848-851

  Rajavel, R D ^a   Hussain, T ^a   Montes, M C ^a   Sawins, M W ^a   Thomas III, S ^a   Chow, D H ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

A3. Molecular beam epitaxy; B1. GaAsSb; B1. InP; B3. Bipolar transistors

Indexed keywords

EPITAXIAL GROWTH; GAIN MEASUREMENT; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

MESA STRUCTURES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0037380497     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02363-1     Document Type: Conference Paper

References (6)

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