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Volumn 51, Issue 12, 2004, Pages 2121-2128

RF figures-of-merit for process optimization

Author keywords

Bipolar analog integrated circuits; Bipolar transistors; Optimization methods; Technology assessment

Indexed keywords

BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; LINEAR NETWORK SYNTHESIS; OPTIMIZATION;

EID: 10644263642     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.838511     Document Type: Article
Times cited : (25)

References (11)
  • 1
    • 0025997798 scopus 로고
    • "An appropriate device figure of merit forbipolar CML"
    • Jan
    • E. Greeneich, "An appropriate device figure of merit forbipolar CML," IEEE Electron Device Lett., vol. 12, pp. 18-20, Jan. 1991.
    • (1991) IEEE Electron Device Lett. , vol.12 , pp. 18-20
    • Greeneich, E.1
  • 2
    • 0001451810 scopus 로고
    • "A propagation-delay expression and its application to the optimization of polysilicon emitter ECL processes"
    • Feb
    • E.-F. Chor, A. Brunnschweiler, and P. Ashburn, "A propagation-delay expression and its application to the optimization of polysilicon emitter ECL processes," IEEE J. Solid-State Circuits, vol. 23, pp. 251-259, Feb. 1988.
    • (1988) IEEE J. Solid-State Circuits , vol.23 , pp. 251-259
    • Chor, E.-F.1    Brunnschweiler, A.2    Ashburn, P.3
  • 3
    • 0024169419 scopus 로고
    • "Bipolar transistor scaling for minimum switching delay and energy dissipation"
    • J. M. C. Stork, "Bipolar transistor scaling for minimum switching delay and energy dissipation," in IEDM Tech. Dig., 1988, pp. 550-553.
    • (1988) IEDM Tech. Dig. , pp. 550-553
    • Stork, J.M.C.1
  • 7
    • 2442702480 scopus 로고    scopus 로고
    • "A 19-23 GHz integrated LC-VCO in production 70 GHz SiGe technology"
    • H. Veenstra and E. van der Heijden, "A 19-23 GHz integrated LC-VCO in production 70 GHz SiGe technology," in Proc ESSCIRC, 2003, pp. 349-352.
    • (2003) Proc ESSCIRC , pp. 349-352
    • Veenstra, H.1    van der Heijden, E.2
  • 8
    • 0032315140 scopus 로고    scopus 로고
    • "QUBiC3: A 0.5 μm BiCMOS production technology, with fT = 30 GHz, fmax = 60 GHz and high-quality passive components for wireless telecommunication applications"
    • A. Pruijmboom, D. Szmyd, R. Brock, R. Wall, N. Morris, F. Keng, and F. Jovenin, "QUBiC3: a 0.5 μm BiCMOS production technology, with fT = 30 GHz, fmax = 60 GHz and high-quality passive components for wireless telecommunication applications," in Proc. IEEE Bipolar/BiCMOS Circuit Technology Meeting, 1998, pp. 120-123.
    • (1998) Proc. IEEE Bipolar/BiCMOS Circuit Technology Meeting , pp. 120-123
    • Pruijmboom, A.1    Szmyd, D.2    Brock, R.3    Wall, R.4    Morris, N.5    Keng, F.6    Jovenin, F.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.