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P. Deixler, A. Rodriguez, W. de Boer, H. Sun, R. Colclaser, D. Bower, N. Bell, A. Yao, R. Brock, Y. Bouttement, G. A. M. Hurkx, L. F. Tiemeijer, J. C. J. Paasschens, H. G. A. Huizing, D. M. H. Hartskeerl, P. Agarwal, P. H. C. Magnee, E. Aksen, and J. W. Slotboom, "QUBiC4X: a fT/fmax = 130/140 GHz SiGe:C-BiCMOS manufacturing technology with elite passives for emerging microwave applications," in Proc. IEEE Bipolar /BiCMOS Circuit Technology Meeting, 2004, to be published.
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A. Pruijmboom, D. Szmyd, R. Brock, R. Wall, N. Morris, F. Keng, and F. Jovenin, "QUBiC3: a 0.5 μm BiCMOS production technology, with fT = 30 GHz, fmax = 60 GHz and high-quality passive components for wireless telecommunication applications," in Proc. IEEE Bipolar/BiCMOS Circuit Technology Meeting, 1998, pp. 120-123.
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J. J. T. M. Donkers, T. Vanhoucke, P. Agarwal, R. J. E. Hueting, P. Meunier-Beillard, M. N. Vijayaraghavan, P. H. C. Magnee, M. A. Verheijen, R. de Kort, and J. W. Slotboom, "Metal emitter SiGe:C HBTs," in IEDM Tech. Dig., submitted for publication.
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