SIMS study on N diffusion in hafnium oxynitride

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 590-593

  Gui, D ^a   Kang, Jinfeng ^b   Yu, Hongyu ^b   Lim, Hsiang Fang ^b  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Diffusion; Hafnium oxynitride; High k; Segregation; SIMS

Indexed keywords

DIELECTRIC PROPERTIES; DIFFUSION; GATES (TRANSISTOR); MOS DEVICES; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SEGREGATION (METALLOGRAPHY); SPUTTER DEPOSITION; TRANSISTORS;

HAFNIUM OXYNITRIDE; HIGH K; SEGREGATION;

HAFNIUM COMPOUNDS;

EID: 2942596016     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.116     Document Type: Conference Paper

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