Characterization of Si-doped GaAs cross-sectional surfaces via ab initio simulations

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 8, 2005, Pages

  Duan, Xiangmei ^a,b   Peressi, Maria ^a,c   Baroni, Stefano ^a,d  

^a DEMOCRITOS NATIONAL SIMULATION CENTER   (Italy)

^b INSTITUTE OF SOLID STATE PHYSICS   (China)

^c UNIVERSITY OF TRIESTE   (Italy)

^d SISSA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33644940661     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.085341     Document Type: Article

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