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Volumn 408, Issue 1-3, 1998, Pages 275-287

Electronic localized and resonance states of relaxed GaAs(110) surface - An ab initio LMTO approach

Author keywords

Ab initio calculations; Density of states; Resonance states; Surface states; Symmetry points

Indexed keywords

APPROXIMATION THEORY; ELECTRON RESONANCE; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; ENERGY GAP; RELAXATION PROCESSES; SINGLE CRYSTALS;

EID: 0032095751     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00253-2     Document Type: Article
Times cited : (9)

References (54)
  • 1
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    • (1994) Surf. Sci. , vol.299-300 , pp. 469
    • Kahn, A.1
  • 10
    • 0343124051 scopus 로고    scopus 로고
    • Surface structures of elemental and compound semiconductors
    • Chapter 6 W.N. Unertl (Ed.), Elsevier, Amsterdam
    • C.B. Duke, Surface structures of elemental and compound semiconductors, Chapter 6 in: W.N. Unertl (Ed.), Handbook of Surface Science, Physical Structure, vol. 1, Elsevier, Amsterdam, 1996.
    • (1996) Handbook of Surface Science, Physical Structure , vol.1
    • Duke, C.B.1
  • 53
    • 0347449094 scopus 로고    scopus 로고
    • personal communication
    • J. Van Laar, personal communication.
    • Van Laar, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.