Interpretation of GaAs(110) scanning tunneling microscopy image contrast by the symmetry of the surface Bloch wave functions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 2, 2001, Pages 511-516

  Jager N D ^a   Weber, E R ^a   Salmeron, M ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL SYMMETRY; ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

BAND BENDING EFFECTS; BLOCH WAVE FUNCTIONS; BRILLOUIN ZONE; CONDUCTION BAND EDGE; IMAGE CONTRAST; SURFACE STATES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035271358     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1350839     Document Type: Article

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