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Applied Physics A: Materials Science and Processing

Volumn 80, Issue 1, 2005, Pages 179-182

Characterization of the interfacial reaction between sputter-deposited Ni film and Si substrate

(5) Zhou, R a Chen, C C a Hashimoto, M a Shi, J b Nakamura, Y b

a UNIVERSITY OF ELECTRO COMMUNICATIONS (Japan)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NICKEL; SILICON; SINGLE CRYSTALS; SPUTTER DEPOSITION; SUBSTRATES;

INTERFACIAL REACTION; SILICON SUBSTRATES; UNBIASED FILMS;

METALLIC FILMS;

EID: 10644245960 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-003-2448-2 Document Type: Review

Times cited : (4)

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