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Journal of Raman Spectroscopy

Volumn 35, Issue 7, 2004, Pages 536-540

Raman scattering probe of anharmonic effects in NiSi

(4) Donthu, S K a Tripathy, S a Chi, D Z a Chua, S J a

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

Anharmonic effects; Micro Raman scattering; Nickel silicide; Process monitoring; Thin films

Indexed keywords

NICKEL; NICKEL COMPOUNDS; PHONONS; PROCESS CONTROL; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICIDES; TEMPERATURE DISTRIBUTION; THIN FILMS; X RAY DIFFRACTION;

ANHARMONIC; ANHARMONIC EFFECT; MICRO-RAMAN SCATTERING; NICKEL SILICIDE; PHONON BROADENING; PHONON SOFTENING; RAMAN PEAK; SAMPLE TEMPERATURE; TEMPERATURE DEPENDENT RAMAN SCATTERING; THIN-FILMS;

PROCESS MONITORING;

NICKEL; SILICON;

ARTICLE; COMPARATIVE STUDY; FILM; PHONON; RAMAN SPECTROMETRY; STRESS; TEMPERATURE DEPENDENCE; THEORY; THERMAL ANALYSIS; X RAY DIFFRACTION;

EID: 3142737287 PISSN: 03770486 EISSN: None Source Type: Journal
DOI: 10.1002/jrs.1164 Document Type: Article

Times cited : (18)

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