Fully suicided Ni 1-xPt xSi metal gate electrode for p-MOSFETs

Electrochemical and Solid-State Letters

Volumn 8, Issue 7, 2005, Pages

  Lee, R T P ^a   Liew, S L ^a   Wang, W D ^a   Chua, E K C ^a   Chow, S Y ^a   Lai, M Y ^a   Chi, D Z ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BILAYER FILMS; GATE ELECTRODES; GATE OXIDES; SILICIDATION;

CMOS INTEGRATED CIRCUITS; DEGRADATION; ELECTROCHEMICAL ELECTRODES; INTERFACES (MATERIALS); MOSFET DEVICES; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

NICKEL ALLOYS;

EID: 23244444119     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1925068     Document Type: Article

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