Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application

Applied Physics Letters

Volumn 86, Issue 2, 2005, Pages

  Biswas, Nivedita ^a   Gurganus, Jason ^a   Misra, Veena ^a   Yang, Yan ^b   Stemmer, Susanne ^b  

^a North Carolina State University   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METAL DEPOSITION; METAL NITRIDES; SILICIDES; SILICON LAYERS;

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRODES; MOLYBDENUM COMPOUNDS; MOS DEVICES; SILICATES; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

NICKEL COMPOUNDS;

EID: 19744383116     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1849850     Document Type: Article

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