In-rich InGaN/GaN quantum wells grown by metal-organic chemical vapor deposition

Journal of Applied Physics

Volumn 99, Issue 4, 2006, Pages

  Kwon, Soon Yong ^a,b   Kim, Hyun Jin ^a,c   Na, Hyunseok ^a,d   Kim, Young Woon ^a   Seo, Hui Chan ^a,e   Kim, Hee Jin ^a   Shin, Yoori ^a   Yoon, Euijoon ^a   Park, Yoon Soo ^a  

^a Seoul National University   (South Korea)

^b Yale University   (United States)

^c SAMSUNG Electronics   (South Korea)

^d RITSUMEIKAN UNIVERSITY   (Japan)

^e University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOND STRENGTH; GROWTH INTERRUPTION (GI); INN GROWTH;

DECOMPOSITION; MASS TRANSFER; SEMICONDUCTING INDIUM COMPOUNDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33644586066     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2173043     Document Type: Article

References (29)

1. J. Wu, Appl. Phys. Lett. 80, 3967 (2002).
2. V. Yu. Davydov, Phys. Status Solidi B 229, R1 (2002).
3. K. Xu, W. Terashima, T. Hata, N. Hashimoto, Y. Ishitani, and A. Yoshikawa, Phys. Status Solidi C 0, 377 (2002).
4. Y. Nanishi, Y. Saito, and T. Yamaguchi, Jpn. J. Appl. Phys., Part 1 42, 2549 (2003).
5. S. Nakamura, Jpn. J. Appl. Phys., Part 2 30, L1705 (1991).
6. B. Maleyre, O. Briot, and S. Ruffenach, J. Cryst. Growth 269, 15 (2004).
7. A. Yamamoto, K. Sugita, H. Takatsuka, A. Hashimoto, and V. Yu. Davydov, J. Cryst. Growth 261, 275 (2004).
8. S.-Y. Kwon, Phys. Status Solidi C 0, 2830 (2003).
9. H. J. Kim, Phys. Status Solidi C 0, 2834 (2003).
10. S.-Y. Kwon, Phys. Status Solidi A 201, 2818 (2004).
11. Y. Sun, Y.-H. Cho, H.-M. Kim, T. W. Kang, S.-Y. Kwon, and E. Yoon, J. Korean Phys. Soc. 45, S615 (2004).
12. S.-Y. Kwon, H. J. Kim, B. Kee, H. Na, and E. Yoon, Phys. Status Solidi C 0, 405 (2002).
13. H. J. Kim, Curr. Appl. Phys. 3, 351 (2003).
14. J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
15. E. Bauer and J. H. van der Merwe, Phys. Rev. B 33, 3657 (1986).
16. Y. F. Ng, Y. G. Cao, M. H. Xie, X. L. Wang, and S. Y. Tong, Appl. Phys. Lett. 81, 3960 (2002).
17. G. Feuillet, B. Daudin, F. Widmann, J. L. Rouviere, and M. Arlery, J. Cryst. Growth 189190, 142 (1998).
18. F. K. LeGoues, Mater. Res. Bull. 21, 38 (1996).
19. J. W. Trainor and K. Rose, J. Electron. Mater. 3, 821 (1974).
20. Q. Guo, O. Kato, and A. Yoshida, J. Appl. Phys. 73, 7969 (1993).
21. O. Ambacher, J. Vac. Sci. Technol. B 14, 3532 (1996).
22. A. Trampert, O. Brandt, and K. H. Ploog, in Gallium Nitride (GaN) I, edited by, J. I. Pankove, and, T. D. Moustakas, (Academic, New York, 1998), p. 173.
23. C.-C. Chuo, C.-M. Lee, and J.-I. Chyi, Appl. Phys. Lett. 78, 314 (2001).
24. From In-rich InGaNGaN SQW structures, the 1-nm-thick InGaN layer still remained to 30 s GI; S.-Y. Kwon, J. Korean Phys. Soc. 46, S130 (2005).
25. S.-Y. Kwon, Appl. Phys. Lett. 86, 192105 (2005).
26. Y. S. Lim, J. Y. Lee, H. S. Kim, and D. W. Moon, Appl. Phys. Lett. 80, 2481 (2002).
27. N. E. B. Cowern, P. C. Zalm, P. van der Sluis, D. J. Gravesteijn, and W. B. de Boer, Phys. Rev. Lett. 72, 2585 (1994).
28. S. S. Iyer and F. K. LeGoues, J. Appl. Phys. 65, 4693 (1989).
29. S. A. Chaparro, J. Drucker, Y. Zhang, D. Chandrasekhar, M. R. McCartney, and D. J. Smith, Phys. Rev. Lett. 83, 1199 (1999).