SCOPUS 정보 검색 플랫폼

Volumn , Issue 7, 2003, Pages 2834-2837

The growth of In-rich InGaN/GaN single quantum wells by metalorganic chemical vapor deposition

(15) Kim, Hyun Jin a Na, Hyunseok a Kwon, Soon Yong a Seo, Hui Chan a Kim, Hee Jin a Shin, Yoori a Lee, Keon Hun a Kim, Young Woon a Yoon, Sukho b Oh, Hye Jeong b Sone, Cheolsoo b Park, Yongjo b Cho, Yong Hoon c Sun, Yuanping c Yoon, Euijoon a

a Seoul National University (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

c Chungbuk National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING LAYER; EMISSION PEAKS; GAN BUFFER LAYERS; GROWTH CONDITIONS; PHOTOLUMINESCENCE EMISSION; SINGLE QUANTUM WELL; SINGLE QUANTUM WELL STRUCTURES; WELL THICKNESS;

GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 20644446046 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200303398 Document Type: Conference Paper

Times cited : (11)

References (9)

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