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Applied Physics Letters

Volumn 80, Issue 14, 2002, Pages 2481-2483

Strain-induced anisotropic Ge diffusion in SiGe/Si superlattices

(4) Lim, Y S a Lee, J Y a Kim, H S b Moon, D W c

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Electronics and Telecommunications Research Institute (ETRI) (South Korea)

c Korea Research Institute of Standards and Science (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC DIFFUSION; ANISOTROPIC RELAXATION; ATOMIC SCALE; COMPOSITION PROFILE; DEPTH RESOLUTION; GE DIFFUSION; ION SCATTERING SPECTROSCOPY; NEAR-SURFACE LAYERS; NON-UNIFORM STRAIN; SIGE/SI; STRAIN DISTRIBUTIONS; STRAIN PROFILES; THERMAL BUDGET;

ATOMIC SPECTROSCOPY; DIFFUSION; GERMANIUM; OPTICAL ANISOTROPY;

STRAIN;

EID: 79956006859 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1465500 Document Type: Article

Times cited : (13)

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