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Physica Status Solidi (A) Applied Research

Volumn 201, Issue 12, 2004, Pages 2818-2822

Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading

(11) Kwon, S Y a Cho, M H b Moon, P a Kim, H J a,a Na, H a Seo, H C a Shin, Y a Moon, D W b Sun, Y c Cho, Y H c Yoon, E a

a Seoul National University (South Korea)

b Korea Research Institute of Standards and Science (South Korea)

c Chungbuk National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NONDESTRUCTIVE EXAMINATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET RADIATION; BACKSCATTERING; INTERFACES (MATERIALS); SCATTERING; SEMICONDUCTING INDIUM COMPOUNDS;

ATOMIC INTERDIFFUSION; ION SCATTERING; SINGLE QUANTUM WELLS (SQW); BAND GAPS; LATTICE MISMATCH;

SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

EID: 6344291258 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/pssa.200405076 Document Type: Conference Paper

Times cited : (16)

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