Neutron-induced SEU in SRAMs: Simulations with n-Si and n-O interactions

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2332-2339

  Lambert, D ^a,b   Baggio, J ^a,b   Hubert, G ^a,c   Ferlet Cavrois, V ^a,b   Flament, O ^a,b   Saigne F ^a,d   Wrobel, F ^a,e   Duarte, H ^b   Boch, J ^a,d   Sagnes, B ^a,d   Buard, N ^a,c   Carriere T ^a,c  

^a IEEE   (France)

^b CEA DAM DIF   (France)

^c AIRBUS GROUP INNOVATIONS   (Germany)

^d UNIVERSITÉ MONTPELLIER II   (France)

^e UNIVERSITÉ CÔTE D'AZUR   (France)

Author keywords

Bulk technologies; Monte Carlo methods; Neutron effects; Single event upset (SEU); Soft error rate (SER); SOI technologies

Indexed keywords

BULK TECHNOLOGIES; NEUTRON EFFECTS; SINGLE-EVENT UPSET (SEU); SOFT ERROR RATE (SER);

COMPUTER SIMULATION; MONTE CARLO METHODS; NEUTRON IRRADIATION; OXYGEN; SENSITIVITY ANALYSIS; SILICON ON INSULATOR TECHNOLOGY;

STATIC RANDOM ACCESS STORAGE;

EID: 33144471711     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860753     Document Type: Conference Paper

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