SEU sensitivity of bulk and SOI technologies to 14-MeV neutrons

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 3032-3037

  Gasiot, G ^a,b   Ferlet Cavrois, V ^b   Baggio, J ^b   Roche, P ^a   Flatresse, P ^a   Guyot, A ^b   Morel, P ^b   Bersillon, O ^b   Du Port de Pontcharra, J ^c  

^a STMICROELECTRONICS   (France)

^b CEA DIF   (France)

^c CEA GRENOBLE   (France)

Author keywords

Alpha particle; Bulk SRAM; Elastic; Inelastic; Irradiation angle; Linear energy transfer; Monte Carlo simulation; Neutron cross section; Neutron irradiation; Nonelastic; Semiconductor reliability; Single event upset; SOI SRAM; Terrestrial environment

Indexed keywords

ALPHA PARTICLES; COMPUTER SIMULATION; ENERGY TRANSFER; MONTE CARLO METHODS; NEUTRON IRRADIATION; STATIC RANDOM ACCESS STORAGE;

NUCLEAR INTERACTIONS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036957352     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805395     Document Type: Conference Paper

References (23)

1. J. F. Ziegler and W. A. Lanford, "Effect of cosmic rays on computer memories," Nature, vol. 206, pp. 776-788, Nov. 1979.
2. E. Normand et al., "Quantitative comparison of single event upsets induced by protons and neutrons," IEEE Trans. Nucl. Sci., vol. 38, pp. 1457-1462, Dec. 1991.
3. N. Cohen et al., "Soft error considerations for deep-submicron CMOS circuit applications," IEDM Tech. Digest, pp. 315-318, Dec. 1999.
4. J.-L. Leray, RADECS Conf. Short Course, Sept. 2001.
5. R. Chau et al., "A 50 nm depleted substrate CMOS transistor (DST)," IEDM Tech. Digest, pp. 621-624, Dec. 2001.
6. F. Bæuf et al., "16 nm planar NMOSFET manufacturable within state-of-the-art CMOS process thanks to specific design and optimization," IEDM Tech. Digests, pp. 637-640, Dec. 2001.
7. Y. Tosaka et al., "Measurement and analysis of neutron-induced soft errors in sub-half-micron CMOS circuits," IEEE Trans. Electron Devices, vol. 45, pp. 1453-1457, July 1998.
8. S. Hareland et al., "Impact of CMOS process scaling and SOI on the soft error rates of logic processes," Symp. VLSI Technology Digest of Technical Paper, 2001.
9. Measurement and Reporting of Alpha Particles and Terrestrial Cosmic Ray-Induced Soft Errors in Semiconductor Devices, JEDEC standard no. JESD 89, Aug. 2001.
10. V.M. Clane, C. L. Dunford, and P. F. Rose, "ENDF: Data Formats and Procedures for the Evaluated Nuclear Data File ENDF-6," BNL.
11. R. Baumann et al., "Boron as a primary source of radiation in high density DRAMS," Symp. VLSI Technology Digest of Technical Papers, pp. 81-82, 1995.
12. X.W. Zhu et al., "Charge deposition modeling of thermal neutron products in fast submicron MOS devices," IEEE Trans. Nucl. Sci., vol. 46, Dec. 1999.
13. J.L. Pelloie et al., "A scalable SOI technology for three successive generations: 0.18, 0.13 and 0.1 μm for low voltage and low power applications," IEEE Int. SOI Conf. Proc., pp. 118-119, Oct. 1996.
14. A. C. Ipri et al., "Suppression of parasitic bipolar effects in SOI MOSFET's by neutron irradiation," IEEE Int. SOI Conf. Proc., pp. 34-35, Oct. 1992.
15. O. Flament et al., "Characterization of the parasitic bipolar in SOI technology: Comparison between direct and indirect triggering techniques," IEEE Int. SOI Conf Proc., pp. 86-87, Oct. 2000.
16. J. Morin et al., Journée Nationale d'Etudes, Sept. 1994.
17. F. Briesmeister, "MCNP a General Monte Carlo N-Particle Transport Code,", MCNP Documentation, 4c ed., 2000.
18. [Online]. Available: http://www.nea.fr/
19. C. Vial et al., "A new approach for the prediction of the neutron-induced SEU rate," IEEE Trans. Nucl. Sci., vol. 45, pp. 2915-2920, Dec. 1998.
20. Y. Tosaka et al., "Cosmic ray neutron-induced soft errors in sub-half micron CMOS circuits," IEEE Electron Device Lett., vol. 18, pp. 99-101, Mar. 1997.
21. J.F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions. New York: Pergamon Press, 1985.
22. G. Gasiot et al., "Comparison of the sensitivity to heavy ions of 0.25 μm bulk and SOI technologies," in RADECS 2001.
23. P. Dodd et al., "SEU sensitive volumes in bulk and SOI SRAM's from first principles calculations and experiments," IEEE Trans. Nucl. Sci., vol. 48, pp. 1893-1903, Dec. 2001.