Neutron-induced SEU in bulk SRAMs in terrestrial environment: Simulations and experiments

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3435-3441

  Lambert, D ^a   Baggio, J ^a   Ferlet Cavrois, V ^a   Flament, O ^a   Saigne, F ^b   Sagnes, B ^b   Buard, N ^c   Carriere T ^d  

^a CEA DAM DIF   (France)

^b UNIVERSITÉ MONTPELLIER II   (France)

^c Europ Aero Def/Space CRC   (France)

^d AIRBUS GROUP INNOVATIONS   (Germany)

Author keywords

Bulk technologies; Monte Carlo methods; Neutron effects; Single event upset; Soft error rate; SRAM chips

Indexed keywords

COMPUTER SIMULATION; INTEGRATED CIRCUITS; IONS; MONTE CARLO METHODS; PARAMETER ESTIMATION; STATIC RANDOM ACCESS STORAGE;

BULK TECHNOLOGIES; NEUTRON EFFECTS; SINGLE-EVENT UPSET; SOFT ERROR RATE; STATIC RANDOM ACCESS MEMORIES (SRAM) CHIPS;

NEUTRONS;

EID: 11044230873     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839133     Document Type: Conference Paper

References (32)

1. J. F. Ziegler, "Terrestrial cosmic rays," IBM J. Res. Devel., vol. 40, no. 1, pp. 19-39, 1996.
2. E. Normand, "Single event upset at ground level," IEEE Trans. Nucl. Sci., vol. 43, pp. 2742-2750, Dec. 1996.
3. C. Dyer, S. Clucas, F. Lei, P. Truscott, R. Kartelle, and C. Comber. Comparative simulations of single event upsets induced by protons and neutrons in commercial SRAMs. presented at RADECS
4. C. Inguimbert, S. Duzellier, and R. Ecoffet, "Contribution of GEANT4 to the determination of sensitive volumes in case of high-integrated RAMs," IEEE Trans. Nucl. Sci., vol. 49, pp. 1480-1485, June 2002.
5. E. Normand, "Single-event effects in avionics," IEEE Trans. Nucl. Sci., vol. 43, pp. 461-474, Apr. 1996.
6. P. C. Murley and G. R. Srinivasan, "Soft-error Monte Carlo modeling program, SEMM," IBM J. Res. Devel., vol.40, no. l, pp. 109-118, 1996.
7. G. Hubert, J. M. Palau, K. Castellani-Coulie, M. C. Calvet, and S. Fourtine, "Detailed analysis of secondary ions' effect for the calculation of neutron-induced SER in SRAMs," IEEE Trans. Nucl. Sci., vol. 48, pp. 1953-1959, Dec. 2001.
8. J. M. Palau, R. Wrobel, K. Castellani-Coulie, M. C. Calvet, P. E. Dodd, and F. W. Sexton, "Monte Carlo exploration of neutron-induced SEU-sensitive volumes in SRAMs," IEEE Trans. Nucl. Sci., vol. 49, pp. 3075-3081, Dec. 2002.
9. JEDEC Standard JESD89, Measurement and Reporting of Alpha Particles and Terrestrial Cosmic Ray-Induced Soft Errors in Semiconductor Devices, Aug. 2001.
10. P. E. Dodd, M. R. Shaneyfelt, J. R. Schwank, and G. L. Hash. Neutron-induced soft errors, latchup, and comparison of SER test methods for SRAM technologies, presented at Int. Electron Devices Meeting IEDM '02
11. T. Granlund, B. Granbom, and N. Olsson, "Soft error rate increase for new generations of SRAMs," IEEE Trans. Nucl. Sci., vol. 50, pp. 2065-2068, Dec. 2003.
12. R. Baumann. The impact of technology scaling on soft error rate performance and limits to the efficacy of error correction, presented at Int. Electron Devices Meeting IEDM '02
13. H. Kobayashi, H. Usuki, K. Shiraishi, H. Tsuchiya, N. Kawamoto, G. Merchant, and J. Kase, "Comparison between neutron-induced system-SER and accelerated-SER in SRAMS," in Proc. 42nd Annual Int. Reliability Physics Symp., 2004, pp. 288-293.
14. P. Hazucha, T. Karnik, J. Maiz, S. Walstra, B. Bloechel, J. Tschanz, G. Dernier, S. Hareland, P. Armstrong, and S. Borkar. Neutron soft error rate measurements in a 90-nm CMOS process and scaling trends in SRAM from 0.25-μm to 90-nm generation, presented at IEEE Int. Electron Devices Meeting IEDM '03
15. J. M. Palau, M. C. Calvet, P. E. Dodd, F. W. Sexton, and P. Roche, "Contribution of device simulation to SER understanding," in Proc. 41st Annu. IEEE Int. Reliability Physics Symp., 2003, pp. 3075-3081.
16. F. Wrobel, J. M. Palau, M. C. Calvet, O. Bersillon, and H. Duarte, "Simulation of nucleon-induced nuclear reactions in a simplified SRAM structure: scaling effects on SEU and MBU cross sections," IEEE Trans. Nucl. Sci., vol. 48, pp. 1946-1952, Dec. 2001.
17. 2 in neutron-induced SEU in SRAMs," IEEE Trans. Nucl. Sci., vol. 50, pp. 2055-2059, Dec. 2003.
18. P. Roche, J. M. Palau, G. Bruguier, C. Tavernier, R. Ecoffet, and J. Gasiot, "Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations," IEEE Trans. Nucl. Sci., vol. 46, pp. 1354-1362, Dec. 1999.
19. J. M. Palau, G. Hubert, K. Coulie, B. Sagnes, M. C. Calvet, and S. Fourtine, "Device simulation study of the SEU sensitivity of SRAM's to in-ternal ion tracks generated by nuclear reactions," IEEE Trans. Nucl. Sci., vol. 48, pp. 225-231, Apr. 2001.
20. J. M. Dorkel and P. Leturcq, "Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level," Solid State Electron., vol. 24, no. 9, pp. 821-825, 1981.
21. D. B. M. Klaassen, "A unified mobility model for device simulation - I Model equations and concentration dependence," Solid State Electron., vol. 35, no. 7, pp. 953-959, 1992.
22. _, "A unified mobility model for device simulation - II.Temperature dependence of carrier mobility and lifetime," Solid State Electron., vol. 35, no. 7, pp. 961-967, 1992.
23. G. Masetti, M. Severi, and S. Solmi, "Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon," IEEE Trans. Electron Devices, no. ED-30, pp. 746-769, July 1983.
24. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
25. G. Gasiot, V. Ferlet-Cavrois, J. Baggio, P. Roche, P. Flatresse, A. Guyot, P. Morel, O. Bersillon, and J. du Port de Pontcharra, "SEU sensitivity of bulk and SOI technologies to 14-MeV neutrons," IEEE Trans. Nucl. Sci., vol. 49, pp. 3032-3037, Dec. 2002.
26. The International Technology Roadmap for Semiconductor, Process In-tegration, Devices, and Structures, 2003.
27. S. A. Campbell, The Science and Engineering of Microelectronic Fab-rication. Oxford, U.K.: Oxford Univ. Press, 1996.
28. G. C. Messenger and M. S. Ash, Single Event Phenomena. London, U.K.: Chapman & Hall, 1997.
29. J. Maiz, S. Hareland, K. Zhang, and P. Armstrong. Characterization of multi-bit soft error events in advanced SRAMs. presented at IEEE. Int. Electron Devices Meeting IEDM '03
30. P. E. Dodd, A. R. Shaneyfelt, K. M. Horn, D. S. Walsh, G. L. Hash, T. A. Hill, B. L. Draper, J. R. Schwank, F. W. Sexton, and P. S. Winokur, "SEU-sensitive volumes in bulk and SOI SRAM's from first-principles calculations and experiments," IEEE Trans. Nucl. Sci., vol. 48, pp. 1893-1903, Dec. 2001.
31. K. Castellani-Coulie, B. Sagnes, F. Saigne, J. M. Palau, M. C. Calvet, P. E. Dodd, and F. W. Sexton, "Comparison of NMOS and PMOS transistor sensitivity to SEU in SRAM's by device simulation," IEEE Trans. Nucl. Sci., vol. 50, pp. 2239-2244, Dec. 2003.
32. V. Ferlet-Cavrois, A. Torres, P. Paillet, J. Baggio, G. Vizkelethy, J. R. Schwank, and A. R. Shaneyfelt. Charge enhancement effects in NMOS bulk transistors induced by heavy ion irradiation, presented at NSREC