-
2
-
-
3042521799
-
Impact of CMOS process scaling and SOI on the soft error rates of logic processes
-
S. Hareland et al., "Impact of CMOS process scaling and SOI on the soft error rates of logic processes," Symposium on VLSI 2001 Tech. Dig., 2001.
-
(2001)
Symposium on VLSI 2001 Tech. Dig.
-
-
Hareland, S.1
-
3
-
-
25344468940
-
Neutron soft error rate measurements in a 90-nm CMOS process and scaling trends in SRAM from 0,25-μm to 90-nm generation
-
P. Hazucha et al., "Neutron Soft Error Rate measurements in a 90-nm CMOS process and scaling trends in SRAM from 0,25-μm to 90-nm generation" IEDM Tech. Dig., p., 2003.
-
(2003)
IEDM Tech. Dig.
-
-
Hazucha, P.1
-
4
-
-
0036927879
-
The impact of technology scaling on soft error rate performance and limits to the efficacy of error correction
-
R. Baumann, "The impact of technology scaling on soft error rate performance and limits to the efficacy of error correction," IEDM Tech. Dig., 2002, pp. 329-332.
-
(2002)
IEDM Tech. Dig.
, pp. 329-332
-
-
Baumann, R.1
-
5
-
-
1242310284
-
Comparisons of soft error rate for SRAMs in commercial SOI and bulk below the 130-nm technology node
-
Dec.
-
P. Roche et al., "Comparisons of soft error rate for SRAMs in commercial SOI and bulk below the 130-nm technology node", IEEE Trans. Nucl. Sci., Vol. 50, No. 6, Dec. 2003, pp. 2046-2054.
-
(2003)
IEEE Trans. Nucl. Sci.
, vol.50
, Issue.6
, pp. 2046-2054
-
-
Roche, P.1
-
6
-
-
0036624473
-
Characterization of the parasitic bipolar amplification in SOI technologies submitted to transient irradiation
-
June
-
V. Ferlet-Cavrois et al., "Characterization of the parasitic bipolar amplification in SOI technologies submitted to transient irradiation," IEEE Trans. Nucl. Sci., Vol. 49, No. 3, June 2002, pp. 1456-1461.
-
(2002)
IEEE Trans. Nucl. Sci.
, vol.49
, Issue.3
, pp. 1456-1461
-
-
Ferlet-Cavrois, V.1
-
7
-
-
3042566081
-
Measurement and reporting of alpha articles and terrestrial cosmic ray-induced soft errors in semiconductor devices
-
Aug.
-
"Measurement and reporting of alpha articles and terrestrial cosmic ray-induced soft errors in semiconductor devices," JEDEC standard No JESD89, Aug. 2001.
-
(2001)
JEDEC Standard
, vol.JESD89
-
-
-
8
-
-
0035175346
-
Total-dose and Single-Event-Upset (SEU) resistance in advanced SRAMs fabricated on SOI using 0.2 μm design rules
-
K. Hirose et al., "Total-dose and Single-Event-Upset (SEU) resistance in advanced SRAMs fabricated on SOI using 0.2 μm design rules," IEEE NSREC Data Workshop Rec., 2001, pp. 48-50.
-
(2001)
IEEE NSREC Data Workshop Rec.
, pp. 48-50
-
-
Hirose, K.1
-
9
-
-
0036952547
-
SEU resistance in advanced SOI-SRAMs fabricated by commercial technology using a rad-hard circuit design
-
Dec.
-
K. Hirose et al., "SEU resistance in advanced SOI-SRAMs fabricated by commercial technology using a rad-hard circuit design," IEEE Trans. Nucl Sci., Vol. 49, No. 6. Dec. 2002, pp. 2965-2968.
-
(2002)
IEEE Trans. Nucl Sci.
, vol.49
, Issue.6
, pp. 2965-2968
-
-
Hirose, K.1
-
10
-
-
0036923569
-
Neutron-induced soft errors, latchup, and comparison of SER test methods for SRAM technologies
-
P.E. Dodd et al., "Neutron-induced soft errors, latchup, and comparison of SER test methods for SRAM technologies," IEDM Tech. Dig., 2002, pp. 333-336.
-
(2002)
IEDM Tech. Dig.
, pp. 333-336
-
-
Dodd, P.E.1
-
11
-
-
0035722922
-
Simulations of nucleon-induced nuclear reaction in a Simplified SRAM structure. Scaling effects on SEU and MBU cross section
-
Dec.
-
F. Wrobel et al., "Simulations of Nucleon-Induced Nuclear Reaction in a Simplified SRAM Structure. Scaling Effects on SEU and MBU Cross Section," IEEE Trans. Nucl. Sci., Vol. 48, No. 6, Dec. 2001, pp. 1946-1952.
-
(2001)
IEEE Trans. Nucl. Sci.
, vol.48
, Issue.6
, pp. 1946-1952
-
-
Wrobel, F.1
-
12
-
-
84955243865
-
Contribution of device simulation to SER understanding
-
J.M. Palau et al., "Contribution of device simulation to SER understanding," IRPS Proceedings, 2003, pp. 71-15.
-
(2003)
IRPS Proceedings
, pp. 71-75
-
-
Palau, J.M.1
-
13
-
-
0036947787
-
Monte carlo exploration of neutron-induced SEU-sensitive volumes in SRAMs
-
Dec.
-
J.M. Palau et al., "Monte Carlo Exploration of Neutron-Induced SEU-Sensitive Volumes in SRAMs," IEEE Trans. Nucl. Sci., Vol. 49, No. 6, Dec. 2002, pp. 3075-3081.
-
(2002)
IEEE Trans. Nucl. Sci.
, vol.49
, Issue.6
, pp. 3075-3081
-
-
Palau, J.M.1
-
14
-
-
1242265251
-
Contribution of SiO2 in neutron-induced SEU in SRAMs
-
Dec.
-
F. Wrobel et al. "Contribution of SiO2 in neutron-induced SEU in SRAMs, IEEE Trans. Nucl. Sci., Vol. 50, No. 6, Dec. 2003, pp. 2055-2059.
-
(2003)
IEEE Trans. Nucl. Sci.
, vol.50
, Issue.6
, pp. 2055-2059
-
-
Wrobel, F.1
|