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Volumn , Issue , 2004, Pages 677-678

Neutron-induced SEU in bulk and SOI SRAMs in terrestrial environment

Author keywords

Neutron; SER; SOI FD

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; COSMIC RAYS; ELECTRIC CHARGE; ELECTRIC POTENTIAL; IONIZING RADIATION; MONTE CARLO METHODS; NEUTRONS;

EID: 3042604387     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (9)

References (14)
  • 2
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    • Impact of CMOS process scaling and SOI on the soft error rates of logic processes
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  • 3
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    • Neutron soft error rate measurements in a 90-nm CMOS process and scaling trends in SRAM from 0,25-μm to 90-nm generation
    • P. Hazucha et al., "Neutron Soft Error Rate measurements in a 90-nm CMOS process and scaling trends in SRAM from 0,25-μm to 90-nm generation" IEDM Tech. Dig., p., 2003.
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  • 4
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    • The impact of technology scaling on soft error rate performance and limits to the efficacy of error correction
    • R. Baumann, "The impact of technology scaling on soft error rate performance and limits to the efficacy of error correction," IEDM Tech. Dig., 2002, pp. 329-332.
    • (2002) IEDM Tech. Dig. , pp. 329-332
    • Baumann, R.1
  • 5
    • 1242310284 scopus 로고    scopus 로고
    • Comparisons of soft error rate for SRAMs in commercial SOI and bulk below the 130-nm technology node
    • Dec.
    • P. Roche et al., "Comparisons of soft error rate for SRAMs in commercial SOI and bulk below the 130-nm technology node", IEEE Trans. Nucl. Sci., Vol. 50, No. 6, Dec. 2003, pp. 2046-2054.
    • (2003) IEEE Trans. Nucl. Sci. , vol.50 , Issue.6 , pp. 2046-2054
    • Roche, P.1
  • 6
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    • Characterization of the parasitic bipolar amplification in SOI technologies submitted to transient irradiation
    • June
    • V. Ferlet-Cavrois et al., "Characterization of the parasitic bipolar amplification in SOI technologies submitted to transient irradiation," IEEE Trans. Nucl. Sci., Vol. 49, No. 3, June 2002, pp. 1456-1461.
    • (2002) IEEE Trans. Nucl. Sci. , vol.49 , Issue.3 , pp. 1456-1461
    • Ferlet-Cavrois, V.1
  • 7
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    • Measurement and reporting of alpha articles and terrestrial cosmic ray-induced soft errors in semiconductor devices
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    • "Measurement and reporting of alpha articles and terrestrial cosmic ray-induced soft errors in semiconductor devices," JEDEC standard No JESD89, Aug. 2001.
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  • 8
    • 0035175346 scopus 로고    scopus 로고
    • Total-dose and Single-Event-Upset (SEU) resistance in advanced SRAMs fabricated on SOI using 0.2 μm design rules
    • K. Hirose et al., "Total-dose and Single-Event-Upset (SEU) resistance in advanced SRAMs fabricated on SOI using 0.2 μm design rules," IEEE NSREC Data Workshop Rec., 2001, pp. 48-50.
    • (2001) IEEE NSREC Data Workshop Rec. , pp. 48-50
    • Hirose, K.1
  • 9
    • 0036952547 scopus 로고    scopus 로고
    • SEU resistance in advanced SOI-SRAMs fabricated by commercial technology using a rad-hard circuit design
    • Dec.
    • K. Hirose et al., "SEU resistance in advanced SOI-SRAMs fabricated by commercial technology using a rad-hard circuit design," IEEE Trans. Nucl Sci., Vol. 49, No. 6. Dec. 2002, pp. 2965-2968.
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    • Hirose, K.1
  • 10
    • 0036923569 scopus 로고    scopus 로고
    • Neutron-induced soft errors, latchup, and comparison of SER test methods for SRAM technologies
    • P.E. Dodd et al., "Neutron-induced soft errors, latchup, and comparison of SER test methods for SRAM technologies," IEDM Tech. Dig., 2002, pp. 333-336.
    • (2002) IEDM Tech. Dig. , pp. 333-336
    • Dodd, P.E.1
  • 11
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    • Simulations of nucleon-induced nuclear reaction in a Simplified SRAM structure. Scaling effects on SEU and MBU cross section
    • Dec.
    • F. Wrobel et al., "Simulations of Nucleon-Induced Nuclear Reaction in a Simplified SRAM Structure. Scaling Effects on SEU and MBU Cross Section," IEEE Trans. Nucl. Sci., Vol. 48, No. 6, Dec. 2001, pp. 1946-1952.
    • (2001) IEEE Trans. Nucl. Sci. , vol.48 , Issue.6 , pp. 1946-1952
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  • 12
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    • Contribution of device simulation to SER understanding
    • J.M. Palau et al., "Contribution of device simulation to SER understanding," IRPS Proceedings, 2003, pp. 71-15.
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  • 13
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    • Monte carlo exploration of neutron-induced SEU-sensitive volumes in SRAMs
    • Dec.
    • J.M. Palau et al., "Monte Carlo Exploration of Neutron-Induced SEU-Sensitive Volumes in SRAMs," IEEE Trans. Nucl. Sci., Vol. 49, No. 6, Dec. 2002, pp. 3075-3081.
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  • 14
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    • Contribution of SiO2 in neutron-induced SEU in SRAMs
    • Dec.
    • F. Wrobel et al. "Contribution of SiO2 in neutron-induced SEU in SRAMs, IEEE Trans. Nucl. Sci., Vol. 50, No. 6, Dec. 2003, pp. 2055-2059.
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    • Wrobel, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.