Issues for single-event proton testing of SRAMs

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3692-3700

  Schwank, J R ^a   Dodd, P E ^a   Shaneyfelt, M R ^a   Felix, J A ^a   Hash, G L ^a   Ferlet Cavrois, V ^b   Paillet, P ^b   Baggio, J ^b   Tangyunyong, P ^a   Blackmore, E ^c  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b CEA DIF   (France)

^c TRIUMF   (Canada)

Author keywords

Integrated circuit reliability; Integrated circuit testing; Proton testing; Radiation effects; Radiation hardening (electronics); Radiation response; Single event effects; Single event latchup; Single event upset

Indexed keywords

DOSIMETRY; HARDNESS; INTEGRATED CIRCUIT TESTING; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; RADIATION EFFECTS; STATIC RANDOM ACCESS STORAGE;

INTEGRATED CIRCUIT RELIABILITY; PROTON TESTING; RADIATION HARDENING (ELECTRONICS); RADIATION RESPONSE; SINGLE EVENT EFFECTS (SEE); SINGLE EVENT LATCHUP (SEL); SINGLE EVENT UPSET (SEU);

PROTON IRRADIATION;

EID: 19944374431     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839301     Document Type: Conference Paper

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