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Volumn 36, Issue 5 I, 2000, Pages 2748-2751

Spintronics: A new paradigm for electronics for the new millennium

Author keywords

Non volatile magnetic memory; Spin transport; Spintronics

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEGREES OF FREEDOM (MECHANICS); GIANT MAGNETORESISTANCE; RANDOM ACCESS STORAGE; TUNNEL JUNCTIONS;

EID: 0034260706     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.908580     Document Type: Article
Times cited : (75)

References (9)
  • 6
    • 4143119129 scopus 로고    scopus 로고
    • Exchange-bias magnetic tunnel junctions and application to nonvolatile magnetic random access memory
    • (1999) J. App. Phys. , vol.85 , pp. 5828
    • Parkin, S.S.P.1
  • 7
    • 0033576573 scopus 로고    scopus 로고
    • Electrical spin injection in a ferromagnetic semiconductor heterostructure
    • December
    • (1999) Nature Volume 402 , pp. 16
    • Ohno, Y.1
  • 8
    • 0009501328 scopus 로고    scopus 로고
    • (Ga, Mn) As: A new diluted magnetic semiconductor based on GaAs
    • (1996) Appl. Phys. Lett , vol.69 , pp. 363-365
    • Ohno, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.