High-temperature ferromagnetism in manganese-doped indium-tin oxide films

Applied Physics Letters

Volumn 85, Issue 5, 2004, Pages 777-779

  Philip, John ^a   Theodoropoulou, Nikoleta ^a   Berera, Geetha ^a   Moodera, Jagadeesh S ^a   Satpati, Biswarup ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b INSTITUTE OF PHYSICS   (India)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM TIN OXIDE (ITO); MAGNETOTRANSPORT PROPERTIES; SPIN POLARIZATION; THERMAL EVAPORATION;

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CARRIER MOBILITY; DEPOSITION; EVAPORATION; FERROMAGNETISM; FILM GROWTH; HALL EFFECT; MAGNETIC MOMENTS; MAGNETOMETERS; MANGANESE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SQUIDS; X RAY DIFFRACTION ANALYSIS;

MAGNETIC SEMICONDUCTORS;

EID: 4344594318     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1773617     Document Type: Article

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