Evaluation of fermi level pinning in low, midgap and high workfunction metal gate electrodes on ALD and MOCVD HfO 2 under high temperature exposure

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 295-298

  Jha, Rashmi ^a   Lee, JaeHoon ^a   Chen, Bei ^a   Lazar, Heather ^a   Gurganus, Jason ^a   Biswas, Nivedita ^a   Majhi, Prashant ^b   Brown, George ^b   Misra, Veena ^a  

^a North Carolina State University   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEAL TEMPERATURE; FERMI LEVEL PINNING; GAS ANNEALING; METAL GATE ELECTRODES;

CORRELATION THEORY; DIELECTRIC MATERIALS; ELECTRODES; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLYBDENUM ALLOYS; MOS CAPACITORS; PARAMETER ESTIMATION; TANTALUM ALLOYS;

FERMI LEVEL;

EID: 21644480169     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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