GaN heteroepitaxial growth on LiTaO3(0001) step substrates by pulsed laser deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 50-52, 2005, Pages

  Tsuchiya, Yousuke ^a   Kobayashi, Atsushi ^b   Ohta, Jitsuo ^b,c   Fujioka, Hiroshi ^b,c   Oshima, Masaharu ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

GaN; LiTaO3; Low temperature buffer layer; PLD

Indexed keywords

CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; GALLIUM NITRIDE; SUBSTRATES;

LOW-TEMPERATURE BUFFER LAYERS; STRUCTURAL PROPERTIES; SUBSTRATE TEMPERATURES;

LITHIUM NIOBATE;

EID: 31944449274     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L1522     Document Type: Article

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